EP 0929910 A1 19990721 - VERTICAL POWER MOSFET
Title (en)
VERTICAL POWER MOSFET
Title (de)
VERTIKALER LEISTUNGS-MOSFET
Title (fr)
TRANSISTOR A EFFET DE CHAMP MOS VERTICAL DE PUISSANCE
Publication
Application
Priority
- DE 9802020 W 19980717
- DE 19730759 A 19970717
Abstract (en)
[origin: DE19730759C1] The invention relates to a vertical power MOSFET, comprising additional zones (11, 12) arranged in an inner zone (1), said zones having the same and inverse type of conductivity as the inner zone (1). The charge carrier service life is reduced in the additional zones (12) having the same conductivity as the inner zone (1). The additional zones (11, 12) are dimensioned in such a way that the space charge zone practically does not exceed the edge opposite to the upper surface of the MOSFET in the additional zone (12) having the same conductivity as the inner zone (1).
IPC 1-7
IPC 8 full level
H01L 21/336 (2006.01); H01L 29/06 (2006.01); H01L 29/167 (2006.01); H01L 29/32 (2006.01); H01L 29/76 (2006.01); H01L 29/78 (2006.01); H01L 31/062 (2006.01)
CPC (source: EP US)
H01L 29/0634 (2013.01 - EP US); H01L 29/167 (2013.01 - EP US); H01L 29/32 (2013.01 - EP US); H01L 29/7802 (2013.01 - EP US)
Citation (search report)
See references of WO 9904437A1
Designated contracting state (EPC)
DE FR GB IE IT
DOCDB simple family (publication)
DE 19730759 C1 19980903; EP 0929910 A1 19990721; JP 2001501042 A 20010123; JP 4116098 B2 20080709; US 6479876 B1 20021112; WO 9904437 A1 19990128
DOCDB simple family (application)
DE 19730759 A 19970717; DE 9802020 W 19980717; EP 98947303 A 19980717; JP 50615499 A 19980717; US 46275900 A 20001012