EP 0932202 B1 20060920 - ESD protection network on semiconductor circuit structures
Title (en)
ESD protection network on semiconductor circuit structures
Title (de)
ESD-Schutznetzwerk auf Halbleiterschaltungsstrukturen
Title (fr)
Réseau de protection ESD sur des structures intégrées semiconducteur
Publication
Application
Priority
EP 97830741 A 19971231
Abstract (en)
[origin: EP0932202A1] The invention relates to an ESD protection network for a CMOS circuit structure integrated in a semiconductor substrate (2) and comprising discrete circuit blocks formed in respective substrate portions which are electrically isolated from one another and independently powered from at least one primary voltage supply (Vcc) having a respective primary ground (GND), and from at least one secondary voltage supply (Vcc_IO) having a respective secondary ground (GND_IO). This network comprises essentially: a first ESD protection element (15) for an input stage of the circuit structure; a second ESD protection element (5) for an output stage of the circuit structure, the first (15) and second (5) protection elements having an input/output terminal (20) of the integrated circuit structure in common; at least one ESD protection element (B0) between the primary supply (Vcc) and the primary ground (GND); at least one ESD protection element (B) between the secondary supply (Vcc_IO) and the secondary ground (GND_IO). <IMAGE>
IPC 8 full level
H01L 27/00 (2006.01); H01L 27/04 (2006.01); H01L 21/822 (2006.01); H01L 21/8238 (2006.01); H01L 27/02 (2006.01); H01L 27/092 (2006.01)
CPC (source: EP US)
H01L 27/0251 (2013.01 - EP US); H01L 27/0259 (2013.01 - EP US)
Designated contracting state (EPC)
DE FR GB IT
DOCDB simple family (publication)
EP 0932202 A1 19990728; EP 0932202 B1 20060920; DE 69736714 D1 20061102; JP H11274319 A 19991008; US 6266222 B1 20010724
DOCDB simple family (application)
EP 97830741 A 19971231; DE 69736714 T 19971231; JP 37471898 A 19981228; US 22362198 A 19981230