EP 0934603 A1 19990811 - FLOATING GATE MEMORY CELL WITH CHARGE LEAKAGE PREVENTION
Title (en)
FLOATING GATE MEMORY CELL WITH CHARGE LEAKAGE PREVENTION
Title (de)
SPEICHERZELLE MIT SCHWEBENDEM GATE UND VERHINDERUNG DER LADUNGSVERLUSTEN
Title (fr)
CELLULE MEMOIRE A GRILLE FLOTTANTE PREVENANT LES FUITES DE CHARGES
Publication
Application
Priority
- US 9808709 W 19980430
- US 85369197 A 19970509
Abstract (en)
[origin: WO9850960A1] A process for fabricating a floating gate memory cell (60) with reduced charge leakage. An oxide regrowth (73) is formed over the sides of the floating gate (69) and is then covered with an oxide protective coating (64, 66). The structure is applicable to salicide and non-salicide memory cells and is especially useful in floating gate memory cells with gate stacks having abnormally shaped side walls.
IPC 1-7
IPC 8 full level
H01L 21/336 (2006.01); H01L 21/8247 (2006.01); H01L 29/423 (2006.01); H01L 29/788 (2006.01); H01L 29/792 (2006.01); H10B 69/00 (2023.01)
CPC (source: EP KR)
H01L 21/18 (2013.01 - KR); H01L 29/42324 (2013.01 - EP); H01L 29/788 (2013.01 - KR); H10B 41/40 (2023.02 - EP); H10B 41/46 (2023.02 - EP); H10B 41/49 (2023.02 - EP); H10B 69/00 (2023.02 - KR)
Designated contracting state (EPC)
DE FR GB IT NL
DOCDB simple family (publication)
WO 9850960 A1 19981112; CA 2259631 A1 19981112; CN 1227001 A 19990825; EP 0934603 A1 19990811; JP 2000513879 A 20001017; KR 20000023619 A 20000425; NO 990075 D0 19990108; NO 990075 L 19990308
DOCDB simple family (application)
US 9808709 W 19980430; CA 2259631 A 19980430; CN 98800616 A 19980430; EP 98920031 A 19980430; JP 54820598 A 19980430; KR 19997000068 A 19990108; NO 990075 A 19990108