EP 0949479 B1 20020918 - Semiconductor igniter
Title (en)
Semiconductor igniter
Title (de)
Halbleiterzünder
Title (fr)
Allumeur semiconducteur
Publication
Application
Priority
DE 19815928 A 19980409
Abstract (en)
[origin: EP0949479A1] The igniter has a thermal insulation layer (104) which is limited to the ignition gap region (108) of a semiconductor layer (106). The semiconductor layer, at its end sections (110,112) held free from the thermal insulating layer, is connected fixed with a carrier (102). The semiconductor layer, is heated, with current passing in the ignition gap region, to trigger the ignition.
IPC 1-7
IPC 8 full level
B60R 21/26 (2006.01); F42B 3/13 (2006.01)
CPC (source: EP US)
F42B 3/13 (2013.01 - EP US)
Designated contracting state (EPC)
AT ES FR GB IT SE
DOCDB simple family (publication)
EP 0949479 A1 19991013; EP 0949479 B1 20020918; AT E224529 T1 20021015; DE 19815928 A1 19991104; DE 19815928 C2 20000511; ES 2181330 T3 20030216; JP 2000028298 A 20000128; US 6220164 B1 20010424
DOCDB simple family (application)
EP 99106969 A 19990409; AT 99106969 T 19990409; DE 19815928 A 19980409; ES 99106969 T 19990409; JP 10172899 A 19990408; US 28861599 A 19990409