Global Patent Index - EP 0953008 A1

EP 0953008 A1 19991103 - A METHOD OF REPAIR OF SEMICONDUCTOR DEVICES

Title (en)

A METHOD OF REPAIR OF SEMICONDUCTOR DEVICES

Title (de)

VERFAHREN ZUR REPARATUR VON HALBLEITERBAUELEMENTEN

Title (fr)

METHODE POUR REPARATION DES DISPOSITIFS A SEMI-CONDUCTEURS

Publication

EP 0953008 A1 19991103 (EN)

Application

EP 98904585 A 19980116

Priority

  • JP 657197 A 19970117
  • US 9800858 W 19980116

Abstract (en)

[origin: WO9831738A1] The present invention provides a thermosetting resin composition useful as an underfilling sealing resin which enables a semiconductor device, such as a CSP/BGA assembly which includes a semiconductor chip mounted on a carrier substrate, to be securely connected to a circuit boad by short-time heat curing and with good productivity, which demonstrates excellent heat shock properties (or thermal cycle properties), and permits the CSP/BGA assembly to be easily removed from the circuit board in the event of semiconductor device or connection failure.

IPC 1-7

C08K 5/09

IPC 8 full level

C08K 5/10 (2006.01); C08G 59/50 (2006.01); C08K 5/00 (2006.01); C08L 63/00 (2006.01); H01L 21/60 (2006.01); H01L 23/28 (2006.01); H01L 23/29 (2006.01); H01L 23/31 (2006.01); H05K 3/28 (2006.01)

CPC (source: EP KR)

C08K 5/0016 (2013.01 - EP KR); C08K 5/101 (2013.01 - KR); C08K 5/3155 (2013.01 - KR); C08L 63/00 (2013.01 - KR); H05K 3/284 (2013.01 - EP KR); H01L 2224/16225 (2013.01 - EP KR); H01L 2224/32225 (2013.01 - EP KR); H01L 2224/73204 (2013.01 - EP KR); H01L 2924/07811 (2013.01 - EP KR); H01L 2924/15311 (2013.01 - EP KR)

Designated contracting state (EPC)

AT BE CH DE DK ES FI FR GB GR IE IT LI LU MC NL PT SE

DOCDB simple family (publication)

WO 9831738 A1 19980723; BR 9806743 A 20000229; CN 1243526 A 20000202; EP 0953008 A1 19991103; EP 0953008 A4 20000503; ID 22238 A 19990923; JP 3613367 B2 20050126; JP H10204259 A 19980804; KR 100554323 B1 20060224; KR 20000070203 A 20001125; MY 118700 A 20050131; TW 561178 B 20031111

DOCDB simple family (application)

US 9800858 W 19980116; BR 9806743 A 19980116; CN 98801882 A 19980116; EP 98904585 A 19980116; ID 990703 A 19980116; JP 657197 A 19970117; KR 19997006429 A 19990715; MY PI9800177 A 19980116; TW 87100682 A 19980117