Global Patent Index - EP 0958601 A1

EP 0958601 A1 19991124 - A METHOD FOR PRODUCING A CHANNEL REGION LAYER IN A VOLTAGE CONTROLLED SEMICONDUCTOR DEVICE

Title (en)

A METHOD FOR PRODUCING A CHANNEL REGION LAYER IN A VOLTAGE CONTROLLED SEMICONDUCTOR DEVICE

Title (de)

VERFAHREN ZUR BILDUNG EINES KANALGEBIETS IN EINER SIC-SCHICHT FÜR EIN SPANNUNGSGESTEUERTES HALBLEITERBAUELEMENT

Title (fr)

PROCEDE DE PRODUCTION D'UNE COUCHE D'UNE REGION CANAL DANS UN DISPOSITIF A SEMI-CONDUCTEUR COMMANDE PAR TENSION

Publication

EP 0958601 A1 19991124 (EN)

Application

EP 97928614 A 19970618

Priority

  • SE 9701088 W 19970618
  • SE 9602407 A 19960619

IPC 1-7

H01L 21/335; H01L 21/265; H01L 21/22; H01L 29/24

IPC 8 full level

H01L 21/22 (2006.01); H01L 21/265 (2006.01); H01L 21/335 (2006.01); H01L 21/336 (2006.01); H01L 29/12 (2006.01); H01L 29/24 (2006.01); H01L 29/78 (2006.01)

Citation (search report)

See references of WO 9749124A1

Designated contracting state (EPC)

DE FR GB IT SE

DOCDB simple family (publication)

EP 0958601 A1 19991124; JP 2000512808 A 20000926

DOCDB simple family (application)

EP 97928614 A 19970618; JP 50281798 A 19970618