EP 0958601 A1 19991124 - A METHOD FOR PRODUCING A CHANNEL REGION LAYER IN A VOLTAGE CONTROLLED SEMICONDUCTOR DEVICE
Title (en)
A METHOD FOR PRODUCING A CHANNEL REGION LAYER IN A VOLTAGE CONTROLLED SEMICONDUCTOR DEVICE
Title (de)
VERFAHREN ZUR BILDUNG EINES KANALGEBIETS IN EINER SIC-SCHICHT FÜR EIN SPANNUNGSGESTEUERTES HALBLEITERBAUELEMENT
Title (fr)
PROCEDE DE PRODUCTION D'UNE COUCHE D'UNE REGION CANAL DANS UN DISPOSITIF A SEMI-CONDUCTEUR COMMANDE PAR TENSION
Publication
Application
Priority
- SE 9701088 W 19970618
- SE 9602407 A 19960619
IPC 1-7
IPC 8 full level
H01L 21/22 (2006.01); H01L 21/265 (2006.01); H01L 21/335 (2006.01); H01L 21/336 (2006.01); H01L 29/12 (2006.01); H01L 29/24 (2006.01); H01L 29/78 (2006.01)
Citation (search report)
See references of WO 9749124A1
Designated contracting state (EPC)
DE FR GB IT SE
DOCDB simple family (publication)
DOCDB simple family (application)
EP 97928614 A 19970618; JP 50281798 A 19970618