Global Patent Index - EP 0959485 A1

EP 0959485 A1 19991124 - Cold cathode electron-emitting device

Title (en)

Cold cathode electron-emitting device

Title (de)

Elektronenemittierende Vorrichtung mit Kaltkathode

Title (fr)

Dispositif d'émission d'électrons à cathode froide

Publication

EP 0959485 A1 19991124 (EN)

Application

EP 98870112 A 19980518

Priority

EP 98870112 A 19980518

Abstract (en)

A cold cathode electron-emitting device (1) comprises a Schottky junction (6) between a thin n-type semiconductor layer (5) and a metal electrode (4), and is exposed to a vacuum. A voltage which is positive with respect to the metal electrode (4) is applied to the n-type semiconductor layer (5) so that the Schottky junction (6) becomes reverse biased to a degree that electrons are injected from the metal electrode (4) into the conduction band of the n-type semiconductor layer (5) by tunnelling. After having travelled through the n-type semiconductor layer (5), a part of the electrons still have enough energy to bridge the electron affinity of the n-type semiconductor layer (5) and are injected into the vacuum. The electron affinity, band gap, thickness and impurity concentration of the n-type semiconductor layer (5) are important parameters for the electron emission to be efficient. <IMAGE>

IPC 1-7

H01J 1/30

IPC 8 full level

H01J 1/308 (2006.01)

CPC (source: EP)

H01J 1/308 (2013.01)

Citation (search report)

  • [A] US 5233196 A 19930803 - OKUNUKI MASAHIKO [JP], et al
  • [A] US 3808477 A 19740430 - SWANK R
  • [AD] US 3098168 A 19630716 - PIERRE AIGRAIN
  • [A] WO 9739469 A1 19971023 - MASSACHUSETTS INST TECHNOLOGY [US]
  • [A] US 3500102 A 19700310 - CROST MUNSEY E, et al
  • [A] US 2960659 A 19601115 - BURTON JOSEPH A
  • [X] GEIS M W ET AL: "DIAMOND EMITTERS FABRICATION AND THEORY", May 1996, JOURNAL OF VACUUM SCIENCE AND TECHNOLOGY: PART B, VOL. 14, NR. 3, PAGE(S) 2060 - 2067, XP000621834
  • [A] GEIS M W ET AL: "THEORY AND EXPERIMENTAL RESULTS OF A NEW DIAMOND SURFACE-EMISSION CATHODE", 1997, THE LINCOLN LABORATORY JOURNAL, VOL. 10, NR. 1, PAGE(S) 3 - 18, XP000749210
  • [A] A.KUDINTSEVA ET AL.: "a cold emitter with semiconductor-metal film structure", RADIO ENGINEERING AND ELECTRONIC PHYSICS, vol. 13, no. 8, 1968, pages 1329 - 1330, XP002083048

Designated contracting state (EPC)

AT BE CH CY DE DK ES FI FR GB GR IE IT LI LU MC NL PT SE

DOCDB simple family (publication)

EP 0959485 A1 19991124

DOCDB simple family (application)

EP 98870112 A 19980518