EP 0961921 A2 19991208 - THERMAL MEMBRANE SENSOR AND METHOD FOR THE PRODUCTION THEREOF
Title (en)
THERMAL MEMBRANE SENSOR AND METHOD FOR THE PRODUCTION THEREOF
Title (de)
THERMISCHER MEMBRANSENSOR UND VERFAHREN ZU SEINER HERSTELLUNG
Title (fr)
CAPTEUR THERMIQUE A MEMBRANE ET SON PROCEDE DE PRODUCTION
Publication
Application
Priority
- DE 9803444 W 19981123
- DE 19752208 A 19971125
Abstract (en)
[origin: DE19752208A1] The invention relates to a method for producing a membrane sensor, especially a thermal membrane sensor, over a silicon substrate (1). A thin layer (4) comprised of silicon carbide or silicon nitride is deposited over an area (2) made of porous silicon which is configured in the surface of the substrate (1). Openings (5, 7) are then formed in said silicon carbide or silicon nitride layer (4), said layer extending to the porous silicon layer (2), by means of a dry etching method. Afterwards, semiconductor and circuit-board structures (6) are implanted in the upper surface of the membrane layer (4) by means of lithographic steps and the sacrificial layer (2) comprised of porous silicon is then removed by a suitable solvent, for example ammoniac. As a result, a cavity (8) is produced underneath the membrane layer (4) which thermally decouples the sensor membrane from the substrate (1).
IPC 1-7
IPC 8 full level
G01F 1/68 (2006.01); G01F 1/684 (2006.01); G01K 7/02 (2006.01); G01K 7/16 (2006.01); H01L 35/34 (2006.01)
CPC (source: EP US)
G01F 1/6845 (2013.01 - EP US); G01K 7/028 (2013.01 - EP US)
Citation (search report)
See references of WO 9927325A2
Designated contracting state (EPC)
CH DE ES FR GB IT LI SE
DOCDB simple family (publication)
DE 19752208 A1 19990602; EP 0961921 A2 19991208; JP 2001510641 A 20010731; US 6825057 B1 20041130; WO 9927325 A2 19990603; WO 9927325 A3 19990812
DOCDB simple family (application)
DE 19752208 A 19971125; DE 9803444 W 19981123; EP 98963367 A 19981123; JP 52738199 A 19981123; US 35537399 A 19991025