EP 0963610 A1 19991215 - BIPOLAR SOI DEVICE HAVING A TILTED PN-JUNCTION, AND A METHOD FOR PRODUCING SUCH A DEVICE
Title (en)
BIPOLAR SOI DEVICE HAVING A TILTED PN-JUNCTION, AND A METHOD FOR PRODUCING SUCH A DEVICE
Title (de)
BIPOLARE SOI-ANORDNUNG MIT GEKIPPTEM PN-ÜBERGANG, UND VERFAHREN ZUR HERSTELLUNG DIESER ANORDNUNG
Title (fr)
DISPOSITIF A SEMI-CONDUCTEUR SUR ISOLANT AVEC JONCTION PN INCLINEE ET PROCEDE DE PRODUCTION DE CE DISPOSITIF
Publication
Application
Priority
- SE 9700377 W 19970305
- SE 9600898 A 19960307
Abstract (en)
[origin: WO9733319A1] In a bipolar semiconductor-on-insulator transistor device (1) comprising an emitter region (4), a base region (5), a collector region (2) and a collector contacting region (6) in a semiconductor wafer, e.g. a monocrystalline silicon wafer (2), on top of an insulator (3), the base-emitter and collector-base junctions are tilted relative to the interface between the semiconductor wafer (2) and the insulator (3). The device can be made by anisotropic etching in order to produce a tilted surface (7) at an edge of the device or equivalently a V-groove having tilted sidewalls. The base and emitter regions (5, 4) are then produced by diffusing suitable donor and acceptor atoms into the material inside the tilted surface. Such a bipolar semiconductor-on-insulator transistor combines the high speed features of a lateral semiconductor device and the high voltage features of a vertical semiconductor device.
IPC 1-7
H01L 29/06; H01L 29/73; H01L 21/302; H01L 21/84; H01L 21/331
IPC 8 full level
H01L 21/331 (2006.01); H01L 29/06 (2006.01); H01L 29/73 (2006.01)
CPC (source: EP KR)
H01L 29/06 (2013.01 - KR); H01L 29/0661 (2013.01 - EP); H01L 29/66265 (2013.01 - EP); H01L 29/7317 (2013.01 - EP)
Citation (search report)
See references of WO 9733319A1
Designated contracting state (EPC)
DE ES FI FR GB IT NL SE
DOCDB simple family (publication)
WO 9733319 A1 19970912; AU 2049397 A 19970922; CA 2243998 A1 19970912; CN 1212787 A 19990331; EP 0963610 A1 19991215; JP 2000506311 A 20000523; KR 19990087554 A 19991227; SE 506510 C2 19971222; SE 9600898 D0 19960307; SE 9600898 L 19970908
DOCDB simple family (application)
SE 9700377 W 19970305; AU 2049397 A 19970305; CA 2243998 A 19970305; CN 97192844 A 19970305; EP 97908624 A 19970305; JP 53171097 A 19970305; KR 19980706992 A 19980905; SE 9600898 A 19960307