Global Patent Index - EP 0966766 A2

EP 0966766 A2 19991229 - A?III -NITRIDE CHANNELED LED

Title (en)

A?III -NITRIDE CHANNELED LED

Title (de)

MIT KANÄLEN VERSEHENE LICHTEMITTIERENDE DIODE AUS EINER AIII-NITRIDVERBINDUNG

Title (fr)

DEL A CANAUX, AU NITRURE A?III

Publication

EP 0966766 A2 19991229 (EN)

Application

EP 98955828 A 19981203

Priority

  • IB 9801933 W 19981203
  • US 99152297 A 19971216

Abstract (en)

[origin: WO9931738A2] A channeled semiconductor LED is disclosed that is comprised of a substrate, upper and lower contact layers, the lower contact layer adjacent the substrate, and a light emitting region interposed between the upper and lower contact layers. One or more channels extend through the upper contact layer and the light emitting layer, the one or more channels defining LED sub-structures, and improving the luminous efficiency of the LED.

IPC 1-7

H01L 33/00

IPC 8 full level

H01L 33/02 (2010.01); H01L 33/08 (2010.01); H01L 33/20 (2010.01); H01L 33/32 (2010.01)

CPC (source: EP)

H01L 33/02 (2013.01); H01L 33/08 (2013.01); H01L 33/20 (2013.01); H01L 33/32 (2013.01)

Citation (search report)

See references of WO 9931738A2

Designated contracting state (EPC)

DE FR GB

DOCDB simple family (publication)

WO 9931738 A2 19990624; WO 9931738 A3 19990902; EP 0966766 A2 19991229; JP 2001511956 A 20010814

DOCDB simple family (application)

IB 9801933 W 19981203; EP 98955828 A 19981203; JP 53224199 A 19981203