EP 0967660 A2 19991229 - MOS semiconductor device
Title (en)
MOS semiconductor device
Title (de)
MOS-Halbleiteranordnung
Title (fr)
Dispositif semi-conducteur MOS
Publication
Application
Priority
- JP 17861298 A 19980625
- JP 11041699 A 19990419
Abstract (en)
The semiconductor device of the present invention includes: a semiconductor layer of a first conductivity type; source and drain regions of a second conductivity type, which are formed within the semiconductor layer; a channel region provided between the source and drain regions; and a gate electrode formed over the channel region. The device further includes: a buried region of the first conductivity type, at least part of the buried region being included in the drain region; and a heavily doped region of the second conductivity type. The heavily doped region is provided at least between a surface of the semiconductor layer and the buried region. The concentration of a dopant of the second conductivity type in the heavily doped region is higher than that of the dopant of the second conductivity type in the drain region. <IMAGE>
IPC 1-7
IPC 8 full level
H01L 29/78 (2006.01); H01L 21/336 (2006.01); H01L 29/06 (2006.01); H01L 29/08 (2006.01); H01L 29/36 (2006.01); H01L 29/10 (2006.01)
CPC (source: EP KR US)
H01L 29/0634 (2013.01 - EP US); H01L 29/0638 (2013.01 - EP US); H01L 29/0847 (2013.01 - EP US); H01L 29/66659 (2013.01 - EP US); H01L 29/78 (2013.01 - KR); H01L 29/7835 (2013.01 - EP US); H01L 29/0692 (2013.01 - EP US); H01L 29/1045 (2013.01 - EP US); H01L 29/105 (2013.01 - EP US); H01L 2924/0002 (2013.01 - EP US)
Designated contracting state (EPC)
DE FR GB NL
DOCDB simple family (publication)
EP 0967660 A2 19991229; EP 0967660 A3 20020828; EP 0967660 B1 20110803; CN 100345307 C 20071024; CN 1159770 C 20040728; CN 1243338 A 20000202; CN 1518126 A 20040804; KR 100606530 B1 20060731; KR 20000006442 A 20000125; TW 421894 B 20010211; US 2002027244 A1 20020307; US 6534829 B2 20030318
DOCDB simple family (application)
EP 99111361 A 19990610; CN 200310124832 A 19990608; CN 99107965 A 19990608; KR 19990024135 A 19990625; TW 88109626 A 19990609; US 32170999 A 19990528