Global Patent Index - EP 0968318 A1

EP 0968318 A1 20000105 - PULSED MODE DEPOSITION FOR LOW RATE FILM DEPOSITION

Title (en)

PULSED MODE DEPOSITION FOR LOW RATE FILM DEPOSITION

Title (de)

BESCHICHTUNG IM GEPULSTEN BETRIEB FÜR FILMBESCHICHTUNG MIT NIEDRIGER RATE

Title (fr)

DEPOT EN MODE PULSE DE FILMS A FAIBLE DEBIT

Publication

EP 0968318 A1 (EN)

Application

EP 98958522 A

Priority

  • US 9823968 W
  • US 6669597 P
  • US 14923498 A

Abstract (en)

[origin: WO9927151A1] A pulsed mode sputtering method and system for sputtering a material from a target onto a substrate in a sputtering deposition process to create thin films. The thin films are created by generating pulsed power from a power supply operated in pulsed mode. The power supply can be either a DC or RF power supply. The pulsed power is applied at full load during the power on portion and at a significantly reduced power (e.g., at 5 % of the full load power) during the power off portion. The pulsed power is applied to the target to sputter the target material onto the substrate at a reduced deposition rate to create a thin film on the substrate. Uniform films having thicknesses of less than 50 angstroms can be created using this pulsed mode deposition technique.

IPC 1-7

C23C 14/34

IPC 8 full level

C23C 14/14 (2006.01); C23C 14/34 (2006.01); C23C 14/35 (2006.01)

CPC (source: EP)

C23C 14/14 (2013.01); C23C 14/34 (2013.01)

Citation (search report)

See references of WO 9927151A1

Designated contracting state (EPC)

AT BE CH CY DE DK ES FI FR GB GR IE IT LI LU MC NL PT SE

DOCDB simple family (publication)

WO 9927151 A1 19990603; EP 0968318 A1 20000105

DOCDB simple family (application)

US 9823968 W 19981110; EP 98958522 A 19981110