Global Patent Index - EP 0970514 A1

EP 0970514 A1 20000112 - A METHOD OF PRODUCING THIN SILICON FILMS

Title (en)

A METHOD OF PRODUCING THIN SILICON FILMS

Title (de)

HERSTELLUNGSMETHODE FÜR EINEN DÜNNEN SILIZIUMFILM

Title (fr)

PROCEDE DE PRODUCTION DE FILMS PELLICULAIRES DE SILICIUM

Publication

EP 0970514 A1 (EN)

Application

EP 98900480 A

Priority

  • AU 9800027 W
  • AU PO468697 A

Abstract (en)

[origin: WO9832164A1] A method of producing thin single crystal silicon films (5). The method includes forming a single crystal substrate (1), depositing or forming a thin single crystal silicon film (5) having the same crystal orientation as said substrate in, on or adjacent to the substrate (1) and providing a plurality of spaced apart etchant access regions (6) through the film (5) or substrate (1). Liftoff of the film (5) is effected by simultaneous etching via the etchant access regions (6). The amount of etching required and the degree of access for etchant provides for detachment without significant degradation of film (5).

IPC 1-7

H01L 21/306; H01L 31/18

IPC 8 full level

H01L 21/306 (2006.01); H01L 21/205 (2006.01); H01L 21/208 (2006.01); H01L 21/3063 (2006.01); H01L 21/308 (2006.01); H01L 31/04 (2006.01); H01L 31/18 (2006.01)

CPC (source: EP)

H01L 21/3083 (2013.01); H01L 31/1804 (2013.01); Y02E 10/547 (2013.01); Y02P 70/521 (2015.11)

Designated contracting state (EPC)

AT BE CH DE DK ES FI FR GB GR IE IT LI LU MC NL PT SE

DOCDB simple family (publication)

WO 9832164 A1 19980723; AU 5544098 A 19980807; AU 743826 B2 20020207; AU PO468697 A0 19970213; CA 2278174 A1 19980723; CN 1243602 A 20000202; EP 0970514 A1 20000112; EP 0970514 A4 20001102; JP 2001508947 A 20010703; KR 20000070285 A 20001125

DOCDB simple family (application)

AU 9800027 W 19980121; AU 5544098 A 19980121; AU PO468697 A 19970121; CA 2278174 A 19980121; CN 98801852 A 19980121; EP 98900480 A 19980121; JP 53341198 A 19980121; KR 19997006513 A 19990719