EP 0970524 A2 20000112 - SiC SEMICONDUCTOR ARRAY WITH ENHANCED CHANNEL MOBILITY
Title (en)
SiC SEMICONDUCTOR ARRAY WITH ENHANCED CHANNEL MOBILITY
Title (de)
SiC-HALBLEITERANORDNUNG MIT HOHER KANALBEWEGLICHKEIT
Title (fr)
ENSEMBLE SEMI-CONDUCTEUR SiC DOTEE D'UNE GRANDE MOBILITE DU CANAL
Publication
Application
Priority
- DE 9800738 W 19980312
- DE 19712561 A 19970325
Abstract (en)
[origin: DE19712561C1] An SiC channel area (2) of a semiconductor array comprises bumps (6) running parallel to each other which are formed by misoriented epitaxial growth on its surface (20). The electrical power flow in the channel area (2) is adjusted parallel to the bumps (6). Thus, high charge carrier mobility in the channel area (2) is achieved.
IPC 1-7
H01L 29/04; H01L 29/24; H01L 21/04; H01L 29/10; H01L 29/739; H01L 29/78
IPC 8 full level
H01L 21/04 (2006.01); H01L 21/337 (2006.01); H01L 29/04 (2006.01); H01L 29/10 (2006.01); H01L 29/12 (2006.01); H01L 29/749 (2006.01); H01L 29/24 (2006.01); H01L 29/739 (2006.01); H01L 29/78 (2006.01); H01L 29/808 (2006.01); H01L 29/06 (2006.01)
CPC (source: EP US)
H10D 12/031 (2025.01 - EP US); H10D 12/441 (2025.01 - EP US); H10D 30/66 (2025.01 - EP US); H10D 62/235 (2025.01 - EP US); H10D 62/405 (2025.01 - EP US); H10D 62/8325 (2025.01 - EP US); H10D 62/117 (2025.01 - EP US)
Designated contracting state (EPC)
DE FR IT
DOCDB simple family (publication)
DE 19712561 C1 19980430; EP 0970524 A2 20000112; JP 2001517375 A 20011002; US 6097039 A 20000801; WO 9843299 A2 19981001; WO 9843299 A3 19981223
DOCDB simple family (application)
DE 19712561 A 19970325; DE 9800738 W 19980312; EP 98923998 A 19980312; JP 54440198 A 19980312; US 40726099 A 19990928