EP 0970526 A2 20000112 - POWER SEMICONDUCTOR DEVICES
Title (en)
POWER SEMICONDUCTOR DEVICES
Title (de)
LEISTUNGS-HALBLEITERANORDNUNGEN
Title (fr)
DISPOSITIF DE PUISSANCE A SEMI-CONDUCTEUR
Publication
Application
Priority
- GB 9726829 A 19971219
- IB 9802027 W 19981214
Abstract (en)
[origin: WO9933119A2] A power semiconductor device comprises a multiple-cellular insulated-gate field-effect transistor structure with each cell (100) present at a corresponding opening (110) in a mesh-shaped gate electrode (11). The cells (100) and the openings (110) are of elongate shape having longitudinal sides (X) at which the channel areas (1) are present under a gate insulating layer (12) under longitudinal parts (11x) of the gate electrode (11). The channel areas (1) are absent at ends (Z) of the elongate cells (100). Preferably, the longitudinal parts (11x) of the gate electrode (11) are interconnected beyond the ends (Z) of the elongate cells (100) by interconnection parts (11z) of the gate electrode (11) which are located on a thicker insulating layer (13) than the gate insulating layer (12). This thicker insulating layer (13) is present at least between facing ends (Z) of neigbouring elongate cells (100) where the channel areas (11) are absent.
IPC 1-7
IPC 8 full level
H01L 21/331 (2006.01); H01L 21/336 (2006.01); H01L 29/06 (2006.01); H01L 29/10 (2006.01); H01L 29/739 (2006.01); H01L 29/749 (2006.01); H01L 29/78 (2006.01); H01L 29/423 (2006.01)
CPC (source: EP US)
H01L 29/0696 (2013.01 - EP); H01L 29/1095 (2013.01 - EP); H01L 29/6634 (2013.01 - EP); H01L 29/7396 (2013.01 - EP); H01L 29/7802 (2013.01 - EP US); H01L 29/41766 (2013.01 - EP); H01L 29/42368 (2013.01 - EP); H01L 29/4238 (2013.01 - EP)
Citation (search report)
See references of WO 9933119A2
Designated contracting state (EPC)
DE FR GB IT NL
DOCDB simple family (publication)
WO 9933119 A2 19990701; WO 9933119 A3 19990826; EP 0970526 A2 20000112; GB 9726829 D0 19980218; JP 2001512629 A 20010821
DOCDB simple family (application)
IB 9802027 W 19981214; EP 98957086 A 19981214; GB 9726829 A 19971219; JP 53353299 A 19981214