Global patent index - EP 0971396 A1

EP 0971396 A1 2000-01-12 - Method for manufacturing bonded wafer and bonded wafer

Title (en)

Method for manufacturing bonded wafer and bonded wafer

Title (de)

Verfahren zur Herstellung eines gebondeten Substrats und gebondeten Substrat

Title (fr)

Méthode de fabrication d'un substrat lié et substrat lié

Publication

EP 0971396 A1 (EN)

Application

EP 99305525 A

Priority

JP 19595598 A

Abstract (en)

The object of the invention is to provide a bonded wafer in which an inferior bonding state of the bonded wafer attained by a hydrogen ion delamination method is reduced, no separation or no void is found at the connecting interface under a superior production characteristic and in a low cost. In a method for manufacturing a bonded wafer by a hydrogen ion delamination method, carbon concentration at a close contacted surface where both wafers are closely contacted from each other is 3 x 10<14> atoms/cm<2> or less. <IMAGE>

IPC 1-7 (main, further and additional classification)

H01L 21/20; H01L 21/306; H01L 21/762

IPC 8 full level (invention and additional information)

H01L 21/02 (2006.01); H01L 21/20 (2006.01); H01L 21/265 (2006.01); H01L 21/306 (2006.01); H01L 21/762 (2006.01); H01L 27/12 (2006.01)

CPC (invention and additional information)

H01L 21/02052 (2013.01); H01L 21/2007 (2013.01); H01L 21/76254 (2013.01); Y10S 438/974 (2013.01); Y10T 428/265 (2013.01)

Citation (search report)

  • [Y] EP 0476897 A2
  • [Y] US 5773355 A
  • [X] MALEVILLE C ET AL: "Wafer bonding and H-implantation mechanisms involved in the Smart -cut(R) technology" MATERIALS SCIENCE AND ENGINEERING B, vol. 46, no. 1-3, 1 April 1997 (1997-04-01), page 14-19 XP004085270 ISSN: 0921-5107
  • [A] FUJIMO S ET AL: "SILICON WAFER DIRECT BONDING THROUGH THE AMORPHOUS LAYER" JAPANESE JOURNAL OF APPLIED PHYSICS, vol. 34, no. 10B, PART 02, 15 October 1995 (1995-10-15), pages L1322-L1324, XP000702224 ISSN: 0021-4922

Designated contracting state (EPC)

DE FR GB

EPO simple patent family

EP 0971396 A1 20000112; JP 2000030992 A 20000128; JP 3385972 B2 20030310; KR 100583591 B1 20060526; KR 20000011625 A 20000225; US 6312797 B1 20011106

INPADOC legal status

2015-12-09 [RAP1] TRANSFER OF RIGHTS OF AN EP APPLICATION

- Owner name: SHIN-ETSU HANDOTAI CO., LTD.

2009-04-22 [RAP1] TRANSFER OF RIGHTS OF AN EP APPLICATION

- Owner name: SHIN-ETSU HANDOTAI CO., LTD.

2005-01-26 [17Q] FIRST EXAMINATION REPORT

- Effective date: 20041210

2000-09-27 [AKX] PAYMENT OF DESIGNATION FEES

- Free Format Text: DE FR GB

2000-07-26 [17P] REQUEST FOR EXAMINATION FILED

- Effective date: 20000527

2000-01-12 [AK] DESIGNATED CONTRACTING STATES:

- Kind Code of Ref Document: A1

- Designated State(s): DE FR GB

2000-01-12 [AX] REQUEST FOR EXTENSION OF THE EUROPEAN PATENT TO

- Free Format Text: AL;LT;LV;MK;RO;SI