Global Patent Index - EP 0971396 A1

EP 0971396 A1 20000112 - Method for manufacturing bonded wafer and bonded wafer

Title (en)

Method for manufacturing bonded wafer and bonded wafer

Title (de)

Verfahren zur Herstellung eines gebondeten Substrats und gebondeten Substrat

Title (fr)

Méthode de fabrication d'un substrat lié et substrat lié

Publication

EP 0971396 A1 20000112 (EN)

Application

EP 99305525 A 19990712

Priority

JP 19595598 A 19980710

Abstract (en)

The object of the invention is to provide a bonded wafer in which an inferior bonding state of the bonded wafer attained by a hydrogen ion delamination method is reduced, no separation or no void is found at the connecting interface under a superior production characteristic and in a low cost. In a method for manufacturing a bonded wafer by a hydrogen ion delamination method, carbon concentration at a close contacted surface where both wafers are closely contacted from each other is 3 x 10<14> atoms/cm<2> or less. <IMAGE>

IPC 1-7

H01L 21/20; H01L 21/762; H01L 21/306

IPC 8 full level

H01L 21/02 (2006.01); H01L 21/20 (2006.01); H01L 21/265 (2006.01); H01L 21/306 (2006.01); H01L 21/762 (2006.01); H01L 27/12 (2006.01)

CPC (source: EP KR US)

H01L 21/02052 (2013.01 - EP US); H01L 21/2007 (2013.01 - EP US); H01L 21/265 (2013.01 - KR); H01L 21/76254 (2013.01 - EP US); Y10S 438/974 (2013.01 - EP US); Y10T 428/265 (2015.01 - EP US)

Citation (search report)

  • [YA] EP 0476897 A2 19920325 - SHINETSU HANDOTAI KK [JP]
  • [YA] US 5773355 A 19980630 - INOUE SHUNSUKE [JP], et al
  • [XY] MALEVILLE C ET AL: "Wafer bonding and H-implantation mechanisms involved in the Smart -cut(R) technology", MATERIALS SCIENCE AND ENGINEERING B, vol. 46, no. 1-3, 1 April 1997 (1997-04-01), pages 14-19, XP004085270, ISSN: 0921-5107
  • [A] FUJIMO S ET AL: "SILICON WAFER DIRECT BONDING THROUGH THE AMORPHOUS LAYER", JAPANESE JOURNAL OF APPLIED PHYSICS, vol. 34, no. 10B, PART 02, 15 October 1995 (1995-10-15), pages L1322 - L1324, XP000702224, ISSN: 0021-4922

Designated contracting state (EPC)

DE FR GB

DOCDB simple family (publication)

EP 0971396 A1 20000112; JP 2000030992 A 20000128; JP 3385972 B2 20030310; KR 100583591 B1 20060526; KR 20000011625 A 20000225; US 6312797 B1 20011106

DOCDB simple family (application)

EP 99305525 A 19990712; JP 19595598 A 19980710; KR 19990027867 A 19990710; US 35014399 A 19990709