EP 0972310 A1 20000119 - METHOD FOR FABRICATING LOW-RESISTANCE CONTACTS ON NITRIDE SEMICONDUCTOR DEVICES
Title (en)
METHOD FOR FABRICATING LOW-RESISTANCE CONTACTS ON NITRIDE SEMICONDUCTOR DEVICES
Title (de)
VERFAHREN ZUM HERSTELLEN VON KONTAKTEN MIT NIEDRIGEM WIDERSTAND AUF HALBLEITERANORDNUNGEN AUS EINER NITRIDVERBINDUNG
Title (fr)
PROCEDE DE FABRICATION DE CONTACTS A FAIBLE RESISTANCE SUR DES DISPOSITIFS A SEMI-CONDUCTEURS DE NITRURE
Publication
Application
Priority
- JP 3770597 A 19970221
- US 9803146 W 19980218
Abstract (en)
[origin: WO9837586A1] A method for fabricating an electrical contact (12) on a surface (11) of a semiconductor comprising a group III element and nitrogen. The contact (12) is formed by depositing a metallic layer on the semiconductor surface and then annealing the layer at a tempeature greater than 400 DEG C for at least 4 hours. The method can be used to construct a Au/Ni contact on GaN semiconductor surface with substantially less resistivity than that obtained by conventional methods.
IPC 1-7
IPC 8 full level
H01L 21/28 (2006.01); H01L 33/00 (2006.01); H01L 33/04 (2010.01); H01L 33/32 (2010.01); H01L 33/40 (2010.01)
CPC (source: EP)
H01L 33/40 (2013.01); H01L 33/32 (2013.01)
Citation (search report)
See references of WO 9837586A1
Designated contracting state (EPC)
DE FR GB
DOCDB simple family (publication)
WO 9837586 A1 19980827; EP 0972310 A1 20000119; JP H10242074 A 19980911
DOCDB simple family (application)
US 9803146 W 19980218; EP 98906549 A 19980218; JP 3770597 A 19970221