Global patent index - EP 0974147 A1

EP 0974147 A1 2000-01-26 - ELECTRICALLY ERASABLE NONVOLATILE MEMORY

Title (en)

ELECTRICALLY ERASABLE NONVOLATILE MEMORY

Title (de)

ELEKTRISCH LÖSCHBARER NICHTFLÜCHTIGER SPEICHER

Title (fr)

MEMOIRE PERMANENTE EFFA ABLE ELECTRIQUEMENT

Publication

EP 0974147 A1 (EN)

Application

EP 98914631 A

Priority

  • US 9807082 W
  • US 83885697 A

Abstract (en)

[origin: WO9847151A1] A nonvolatile memory cell which is highly scalable includes a cell formed in a triple well. The control gate is negatively biased. By biasing the P-well and drain (or source) positively within a particular voltage range when erasing, GIDL current and degradation from hole trapping can be diminished and hence a highly scalable technology may be achieved.

IPC 1-7 (main, further and additional classification)

G11C 16/06; G11C 16/04

IPC 8 full level (invention and additional information)

G11C 16/04 (2006.01); G11C 16/14 (2006.01); H01L 21/8247 (2006.01); H01L 27/115 (2006.01); H01L 29/788 (2006.01); H01L 29/792 (2006.01)

CPC (invention and additional information)

G11C 16/0416 (2013.01); G11C 16/14 (2013.01)

Citation (search report)

See references of WO 9847151A1

Designated contracting state (EPC)

DE DK FI FR GB IE IT NL SE

EPO simple patent family

WO 9847151 A1 19981022; CA 2286125 A1 19981022; CN 1252156 A 20000503; EP 0974147 A1 20000126; JP H10335504 A 19981218; KR 20010006135 A 20010126; TW 389998 B 20000511

INPADOC legal status

2001-10-31 [18D] DEEMED TO BE WITHDRAWN

- Ref Legal Event Code: 18D

- Effective date: 20010419

2001-01-24 [17Q] FIRST EXAMINATION REPORT

- Ref Legal Event Code: 17Q

- Effective date: 20001208

2000-01-26 [17P] REQUEST FOR EXAMINATION FILED

- Ref Legal Event Code: 17P

- Effective date: 19991110

2000-01-26 [AK] DESIGNATED CONTRACTING STATES:

- Ref Legal Event Code: AK

- Designated State(s): DE DK FI FR GB IE IT NL SE