EP 0974147 A1 20000126 - ELECTRICALLY ERASABLE NONVOLATILE MEMORY
Title (en)
ELECTRICALLY ERASABLE NONVOLATILE MEMORY
Title (de)
ELEKTRISCH LÖSCHBARER NICHTFLÜCHTIGER SPEICHER
Title (fr)
MEMOIRE PERMANENTE EFFA ABLE ELECTRIQUEMENT
Publication
Application
Priority
- US 9807082 W 19980407
- US 83885697 A 19970411
Abstract (en)
[origin: WO9847151A1] A nonvolatile memory cell which is highly scalable includes a cell formed in a triple well. The control gate is negatively biased. By biasing the P-well and drain (or source) positively within a particular voltage range when erasing, GIDL current and degradation from hole trapping can be diminished and hence a highly scalable technology may be achieved.
IPC 1-7
IPC 8 full level
G11C 16/04 (2006.01); G11C 16/14 (2006.01); H01L 21/8247 (2006.01); H01L 27/115 (2006.01); H01L 29/788 (2006.01); H01L 29/792 (2006.01)
CPC (source: EP KR)
G11C 16/0416 (2013.01 - EP); G11C 16/14 (2013.01 - EP); H10B 69/00 (2023.02 - KR)
Citation (search report)
See references of WO 9847151A1
Designated contracting state (EPC)
DE DK FI FR GB IE IT NL SE
DOCDB simple family (publication)
WO 9847151 A1 19981022; CA 2286125 A1 19981022; CN 1252156 A 20000503; EP 0974147 A1 20000126; JP H10335504 A 19981218; KR 20010006135 A 20010126; TW 389998 B 20000511
DOCDB simple family (application)
US 9807082 W 19980407; CA 2286125 A 19980407; CN 98804053 A 19980407; EP 98914631 A 19980407; JP 11604298 A 19980410; KR 19997009213 A 19991007; TW 87105486 A 19980410