Global Patent Index - EP 0974147 A1

EP 0974147 A1 20000126 - ELECTRICALLY ERASABLE NONVOLATILE MEMORY

Title (en)

ELECTRICALLY ERASABLE NONVOLATILE MEMORY

Title (de)

ELEKTRISCH LÖSCHBARER NICHTFLÜCHTIGER SPEICHER

Title (fr)

MEMOIRE PERMANENTE EFFA ABLE ELECTRIQUEMENT

Publication

EP 0974147 A1 20000126 (EN)

Application

EP 98914631 A 19980407

Priority

  • US 9807082 W 19980407
  • US 83885697 A 19970411

Abstract (en)

[origin: WO9847151A1] A nonvolatile memory cell which is highly scalable includes a cell formed in a triple well. The control gate is negatively biased. By biasing the P-well and drain (or source) positively within a particular voltage range when erasing, GIDL current and degradation from hole trapping can be diminished and hence a highly scalable technology may be achieved.

IPC 1-7

G11C 16/06; G11C 16/04

IPC 8 full level

G11C 16/04 (2006.01); G11C 16/14 (2006.01); H01L 21/8247 (2006.01); H01L 27/115 (2006.01); H01L 29/788 (2006.01); H01L 29/792 (2006.01)

CPC (source: EP KR)

G11C 16/0416 (2013.01 - EP); G11C 16/14 (2013.01 - EP); H10B 69/00 (2023.02 - KR)

Citation (search report)

See references of WO 9847151A1

Designated contracting state (EPC)

DE DK FI FR GB IE IT NL SE

DOCDB simple family (publication)

WO 9847151 A1 19981022; CA 2286125 A1 19981022; CN 1252156 A 20000503; EP 0974147 A1 20000126; JP H10335504 A 19981218; KR 20010006135 A 20010126; TW 389998 B 20000511

DOCDB simple family (application)

US 9807082 W 19980407; CA 2286125 A 19980407; CN 98804053 A 19980407; EP 98914631 A 19980407; JP 11604298 A 19980410; KR 19997009213 A 19991007; TW 87105486 A 19980410