Global Patent Index - EP 0974159 A1

EP 0974159 A1 20000126 - MOS TRANSISTOR WITH HIGH DOPING GRADIENT UNDER THE GRID

Title (en)

MOS TRANSISTOR WITH HIGH DOPING GRADIENT UNDER THE GRID

Title (de)

MOS TRANSISTOR MIT HÖHEM DOTIERUNGSGRADIERT UNTER DESSEN GATTER

Title (fr)

TRANSISTOR MOS A FORT GRADIENT DE DOPAGE SOUS SA GRILLE

Publication

EP 0974159 A1 20000126 (FR)

Application

EP 98920620 A 19980414

Priority

  • FR 9800751 W 19980414
  • FR 9704710 A 19970411

Abstract (en)

[origin: FR2762138A1] The invention concerns an LDD-type MOS transistor comprising under its grid zone a first lightly-doped region (31) followed by a second region with the same type of conductivity with higher doping level with a high doping gradient between the two regions. The interface zone between the two regions contain nitrogen atoms resulting from a nitrogen implantation produced before epitaxy.

IPC 1-7

H01L 21/336; H01L 21/22; H01L 29/10

IPC 8 full level

H01L 21/22 (2006.01); H01L 21/265 (2006.01); H01L 21/336 (2006.01); H01L 29/78 (2006.01)

CPC (source: EP US)

H01L 21/2205 (2013.01 - EP); H01L 21/26506 (2013.01 - EP US); H01L 29/66651 (2013.01 - EP); H01L 29/7833 (2013.01 - EP)

Citation (search report)

See references of WO 9847173A1

Designated contracting state (EPC)

DE GB IT

DOCDB simple family (publication)

FR 2762138 A1 19981016; FR 2762138 B1 19990702; EP 0974159 A1 20000126; US 6465332 B1 20021015; WO 9847173 A1 19981022

DOCDB simple family (application)

FR 9704710 A 19970411; EP 98920620 A 19980414; FR 9800751 W 19980414; US 40285300 A 20000110