EP 0976153 A1 20000202 - NANOPOROUS DIELECTRIC FILMS WITH GRADED DENSITY AND PROCESS FOR MAKING SUCH FILMS
Title (en)
NANOPOROUS DIELECTRIC FILMS WITH GRADED DENSITY AND PROCESS FOR MAKING SUCH FILMS
Title (de)
NANOPORÖSE DIELEKTRISCHE SCHICHTEN MIT DICHTGRADIENT UND VERFAHREN ZU IHRE HERSTELLUNG
Title (fr)
PELLICULES DIELECTRIQUES NANOPOREUSES A DENSITE PROGRESSIVE, ET LEUR PROCEDE DE FABRICATION
Publication
Application
Priority
- US 9806492 W 19980402
- US 4326197 P 19970417
- US 4647498 A 19980325
Abstract (en)
[origin: WO9847177A1] The present invention relates to nanoporous dielectric films (10) and to a process for their manufacture. A substrate having a plurality of raised lines (4) on its surface is provided with a relatively high porosity, low dielectric constant, silicon containing polymer composition (10) positioned between the raise lines (4) and a relatively low porosity, high dielectric constant, silicon containing composition (8) positioned on the lines (4).
IPC 1-7
IPC 8 full level
H01L 21/316 (2006.01); H01L 21/768 (2006.01); H01L 23/522 (2006.01); H01L 23/532 (2006.01)
CPC (source: EP KR)
H01L 21/02126 (2013.01 - EP KR); H01L 21/02203 (2013.01 - EP KR); H01L 21/02216 (2013.01 - EP KR); H01L 21/02282 (2013.01 - EP KR); H01L 21/02337 (2013.01 - EP KR); H01L 21/02343 (2013.01 - EP KR); H01L 21/7682 (2013.01 - EP KR); H01L 23/5222 (2013.01 - EP); H01L 23/5329 (2013.01 - EP); H01L 2221/1047 (2013.01 - EP); H01L 2924/0002 (2013.01 - EP)
Citation (search report)
See references of WO 9847177A1
Designated contracting state (EPC)
DE FR GB IE NL
DOCDB simple family (publication)
WO 9847177 A1 19981022; AU 6878598 A 19981111; CN 1260908 A 20000719; EP 0976153 A1 20000202; JP 2001520805 A 20011030; KR 20010006553 A 20010126; TW 367591 B 19990821
DOCDB simple family (application)
US 9806492 W 19980402; AU 6878598 A 19980402; CN 98806313 A 19980402; EP 98914425 A 19980402; JP 54396498 A 19980402; KR 19997009643 A 19991018; TW 87105460 A 19980410