EP 0976154 A1 20000202 - EMC-OPTIMISED POWER SWITCH
Title (en)
EMC-OPTIMISED POWER SWITCH
Title (de)
EMV-OPTIMIERTER LEISTUNGSSCHALTER
Title (fr)
SECTIONNEUR DE PUISSANCE A COMPATIBILITE ELECTROMAGNETIQUE OPTIMISEE
Publication
Application
Priority
- DE 9900193 W 19990126
- DE 19806817 A 19980218
Abstract (en)
[origin: DE19806817C1] The power switch includes a semiconductor chip (3) on a lead frame (2). The chip (3) has at least a first terminal (D,K) for an active potential and a second terminal (S,A) for a quiescent potential. The lead frame (2) is connected to the second terminal (S,A). Preferably the first terminal is the drain and the second terminal is the source of a transistor (6). Alternatively the first terminal is the cathode and the second terminal is the anode of a diode. The chip may be mounted over the source(s) of the transistor on the lead frame (2). A control terminal (G) of the transistor (6) may be connected via trenches in the chip (3) to the free surface of the chip.
IPC 1-7
IPC 8 full level
H01L 23/48 (2006.01); H01L 23/495 (2006.01)
CPC (source: EP US)
H01L 23/481 (2013.01 - EP US); H01L 23/49562 (2013.01 - EP US); H01L 2224/73265 (2013.01 - EP US); H01L 2924/1301 (2013.01 - EP US); H01L 2924/1305 (2013.01 - EP US); H01L 2924/13055 (2013.01 - EP US); H01L 2924/13091 (2013.01 - EP US)
Citation (search report)
See references of WO 9943027A1
Designated contracting state (EPC)
DE FR GB IE IT
DOCDB simple family (publication)
DE 19806817 C1 19990708; EP 0976154 A1 20000202; JP 2001520810 A 20011030; US 6404041 B1 20020611; WO 9943027 A1 19990826
DOCDB simple family (application)
DE 19806817 A 19980218; DE 9900193 W 19990126; EP 99908750 A 19990126; JP 54195499 A 19990126; US 42046199 A 19991018