Global Patent Index - EP 0976457 A1

EP 0976457 A1 20000202 - Method for treating semiconductor material

Title (en)

Method for treating semiconductor material

Title (de)

Verfahren zum Behandeln von Halbleitermaterial

Title (fr)

Procédé de traitement de matériau semiconducteur


EP 0976457 A1 (DE)


EP 99113591 A


DE 19834447 A

Abstract (en)

For the processing of semiconductor materials, such as for the prodn. of solar cells, the semiconductor rods (1) of polycrystalline silicon are in a liquid medium and are subjected to shock waves from an energy converter (4). The energy converter is at a gap of 1-100 cm from the semiconductor rods. The shock waves from an arc between electrodes (8), through an elastic membrane (7), have a pulse energy of 1-20 kJ and a pulse increase time of 1-5 mu s to the max. energy level. The energy converter is a semi-ellipsoid reflector. The working surfaces of the transport and positioning units are of plastics to prevent any soiling of the semiconductor materials. The inner surfaces of the chamber are coated with plastics, where the semiconductor materials are broken down.

IPC 1-7

B02C 19/18

IPC 8 full level

B02C 19/00 (2006.01); B02C 19/18 (2006.01); B02C 23/36 (2006.01); B28D 5/00 (2006.01); C30B 29/06 (2006.01)

CPC (source: EP)

B02C 19/18 (2013.01); B28D 5/0005 (2013.01); B02C 2019/183 (2013.01)

Citation (applicant)

Citation (search report)

Designated contracting state (EPC)


DOCDB simple family (publication)

EP 0976457 A1 20000202; EP 0976457 B1 20001115; DE 19834447 A1 20000210; JP 2000079350 A 20000321; JP 3180910 B2 20010703; US 6360755 B1 20020326

DOCDB simple family (application)

EP 99113591 A 19990708; DE 19834447 A 19980730; JP 21248199 A 19990727; US 36246299 A 19990728