Global patent index - EP 0978140 A1

EP 0978140 A1 2000-02-09 - METHOD FOR ETCHING SILICON WAFER

Title (en)

METHOD FOR ETCHING SILICON WAFER

Title (de)

ÄTZVERFAHREN FÜR EINE SILIZIUM-SCHEIBE

Title (fr)

PROCEDE D'ATTAQUE DE PLAQUETTE EN SILICIUM

Publication

EP 0978140 A1 (EN)

Application

EP 98920143 A

Priority

  • JP 11455697 A
  • US 9808936 W
  • US 7068098 A

Abstract (en)

[origin: WO9850948A1] A method for etching a silicon wafer includes the steps of: lapping a silicon wafer; etching the silicon wafer; and polishing the silicon wafer; wherein the etching step includes an etching treatment and a rinsing treatment, and at least an oxidizing agent is added to a rinse to be used for the rinsing treatment, thereby forming an oxidation film on a surface of the silicon wafer.

IPC 1-7 (main, further and additional classification)

H01L 21/302

IPC 8 full level (invention and additional information)

H01L 21/306 (2006.01)

CPC (invention and additional information)

H01L 21/02052 (2013.01)

Citation (search report)

See references of WO 9850948A1

Designated contracting state (EPC)

DE FR GB IT

EPO simple patent family

WO 9850948 A1 19981112; CN 1254440 A 20000524; EP 0978140 A1 20000209

INPADOC legal status

2002-10-30 [18D] DEEMED TO BE WITHDRAWN

- Ref Legal Event Code: 18D

- Effective date: 20020227

2001-11-28 [17Q] FIRST EXAMINATION REPORT

- Ref Legal Event Code: 17Q

- Effective date: 20011016

2000-02-09 [17P] REQUEST FOR EXAMINATION FILED

- Ref Legal Event Code: 17P

- Effective date: 19991124

2000-02-09 [AK] DESIGNATED CONTRACTING STATES:

- Ref Legal Event Code: AK

- Designated State(s): DE FR GB IT