Global Patent Index - EP 0980589 A1

EP 0980589 A1 20000223 - A PN-DIODE OF SiC AND A METHOD FOR PRODUCTION THEREOF

Title (en)

A PN-DIODE OF SiC AND A METHOD FOR PRODUCTION THEREOF

Title (de)

PN-DIODE AUS SIC UND VERFAHREN ZUR HERSTELLUNG

Title (fr)

DIODE A JONCTION PNPN, EN SiC, ET SON PROCEDE DE PRODUCTION

Publication

EP 0980589 A1 (EN)

Application

EP 98904481 A

Priority

  • SE 9800239 W
  • SE 9701724 A

IPC 1-7

H01L 29/861; H01L 21/266; H01L 21/329; H01L 29/24

IPC 8 full level

H01L 29/861 (2006.01); H01L 21/266 (2006.01); H01L 21/329 (2006.01); H01L 29/24 (2006.01)

Citation (search report)

See references of WO 9852232A1

Designated contracting state (EPC)

CH DE FR GB IT LI SE

DOCDB simple family (publication)

EP 0980589 A1 20000223; JP 2001525990 A 20011211

DOCDB simple family (application)

EP 98904481 A 19980212; JP 54910798 A 19980212