EP 0981842 A1 20000301 - HIGH FREQUENCY SEMICONDUCTOR LASER MODULE
Title (en)
HIGH FREQUENCY SEMICONDUCTOR LASER MODULE
Title (de)
HOCHFREQUENZ-HALBLEITERLASERMODUL
Title (fr)
MODULE DE LASER A SEMICONDUCTEUR HAUTE FREQUENCE
Publication
Application
Priority
- DE 9800823 W 19980321
- DE 19719853 A 19970512
Abstract (en)
[origin: DE19719853A1] Disclosed is a high frequency semiconductor laser module with a silicone substrate, especially a low resistance siliconized substrate, a laser diode mounted thereon and at least two H-F feeds, one of which is insulated from said siliconized substrate by a dielectric layer. According to the invention, the laser diode is laid on the siliconized substrate by means of a metallic assembly layer, and the H-F layer is moved away so as to be in the vincinity of the laser diode on the dielectric layer.
IPC 1-7
IPC 8 full level
H01S 5/022 (2006.01); H01S 5/0239 (2021.01); H01S 5/02 (2006.01); H01S 5/042 (2006.01); H01S 5/062 (2006.01)
CPC (source: EP US)
H01S 5/0239 (2021.01 - EP US); H01L 2224/48091 (2013.01 - EP US); H01S 5/0208 (2013.01 - EP US); H01S 5/021 (2013.01 - EP US); H01S 5/0234 (2021.01 - EP US); H01S 5/02345 (2021.01 - EP US); H01S 5/0237 (2021.01 - EP US); H01S 5/042 (2013.01 - EP US); H01S 5/0422 (2013.01 - EP US); H01S 5/06226 (2013.01 - EP US)
Citation (search report)
See references of WO 9852255A1
Designated contracting state (EPC)
CH DE DK FR GB IT LI SE
DOCDB simple family (publication)
DE 19719853 A1 19981119; EP 0981842 A1 20000301; US 6456641 B1 20020924; WO 9852255 A1 19981119
DOCDB simple family (application)
DE 19719853 A 19970512; DE 9800823 W 19980321; EP 98924030 A 19980321; US 40390599 A 19991027