Global Patent Index - EP 0983613 A1

EP 0983613 A1 2000-03-08 - SELF-PROTECT THYRISTOR

Title (en)

SELF-PROTECT THYRISTOR

Title (de)

THYRISTOR MIT SELBSTSCHUTZ

Title (fr)

THYRISTOR A AUTO PROTECTION

Publication

EP 0983613 A1 (DE)

Application

EP 98924147 A

Priority

  • DE 19721655 A
  • EP 9802305 W

Abstract (en)

[origin: DE19721655C1] The invention relates to a self-protect thyristor with a series-located MOSFET (M1) and a second self-controlled MOSFET (M2) between the p base of the thyristor and the external cathode (KA). Said thyristor is provided with several parallel-connected unit cells for the thyristors in a semiconductor disk. The invention provides that the voltage in the series MOSFET (M1) should serve to indicate over-voltage and overheating. An additional MOSFET(M4) is also provided whose source (area) is connected to the source of the series MOSFET (M1) and whose gate is conductively connected to the drain of the series MOSFET (M1). The invention also includes resistor (Rg) between the gate electrode (G1) of the series MOSFET (M1) and the gate of the component.

IPC 1-7 (main, further and additional classification)

H01L 29/74; H01L 27/02; H03K 17/082

IPC 8 full level (invention and additional information)

H01L 29/74 (2006.01); H01L 29/745 (2006.01); H01L 29/749 (2006.01)

CPC (invention and additional information)

H01L 29/7455 (2013.01); H01L 29/7436 (2013.01); H01L 29/749 (2013.01)

Citation (search report)

See references of WO 9853503A1

Designated contracting state (EPC)

DE FR GB IT

EPO simple patent family

DE 19721655 C1 19981203; EP 0983613 A1 20000308; US 6423987 B1 20020723; WO 9853503 A1 19981126

INPADOC legal status


2005-05-04 [18D] DEEMED TO BE WITHDRAWN

- Effective date: 20041102

2000-03-08 [17P] REQUEST FOR EXAMINATION FILED

- Effective date: 19990916

2000-03-08 [AK] DESIGNATED CONTRACTING STATES:

- Kind Code of Ref Document: A1

- Designated State(s): DE FR GB IT