EP 0984051 A4 20011205 - HEAT-RESISTANT ADHESIVES AND SEMICONDUCTOR DEVICES PRODUCED THEREWITH

Title (en)

HEAT-RESISTANT ADHESIVES AND SEMICONDUCTOR DEVICES PRODUCED THEREWITH

Title (de)

HITZEBESTÄNDIGER KLEBSTOFF UND DAMIT HERGESTELLTE HALBLEITERANORDNUNGEN

Title (fr)

ADHESIFS THERMORESISTANTS ET DISPOSITIFS SEMI-CONDUCTEURS COMPORTANT CES ADHESIFS

Publication

EP 0984051 A4 20011205 (EN)

Application

EP 98921865 A 19980528

Priority

JP 9802361 W 19980528
JP 14225197 A 19970530
JP 14225297 A 19970530

Abstract (en)

[origin: EP0984051A1] A thermoresistance adhesive which does not dissolve in the sealer-composing resins at the sealer molding temperature and is capable of providing a semiconductor chip/lead frame adhesive strength under shear of 1 N/4 mm<2> or greater, and including, for example, amide, imide, ester or ether linkage is suited for use in producing thermoresistance adhesive solutions and thermoresistance resin pastes, and the semiconductor chips, lead frames, films, etc., made by using such an adhesive are suited for providing low-cost semiconductor devices. <IMAGE>

IPC 1-7

C09J 9/00; H01L 23/28; C09J 179/08; H01L 23/495

IPC 8 full level

C08J 3/24 (2006.01); C08L 79/08 (2006.01); C09J 9/00 (2006.01); C09J 179/08 (2006.01); H01L 21/52 (2006.01); H01L 23/29 (2006.01); H01L 23/31 (2006.01); H01L 23/495 (2006.01)

CPC (source: EP KR US)

C09J 9/00 (2013.01 - EP US); H01L 23/4951 (2013.01 - EP KR US); C09J 2203/326 (2013.01 - KR); H01L 24/45 (2013.01 - EP US); H01L 24/48 (2013.01 - EP US); H01L 2224/32014 (2013.01 - EP US); H01L 2224/32245 (2013.01 - EP US); H01L 2224/45124 (2013.01 - EP US); H01L 2224/45144 (2013.01 - EP US); H01L 2224/45147 (2013.01 - EP US); H01L 2224/48091 (2013.01 - EP US); H01L 2224/48247 (2013.01 - EP US); H01L 2224/4826 (2013.01 - EP US); H01L 2224/73215 (2013.01 - EP US); H01L 2224/73265 (2013.01 - EP US); H01L 2924/01012 (2013.01 - EP US); H01L 2924/01015 (2013.01 - EP US); H01L 2924/01021 (2013.01 - EP US); H01L 2924/01039 (2013.01 - EP US); H01L 2924/01057 (2013.01 - EP US); H01L 2924/01079 (2013.01 - EP US); H01L 2924/10253 (2013.01 - EP US); H01L 2924/181 (2013.01 - EP US); H01L 2924/3025 (2013.01 - EP US)

C-Set (source: EP US)

Citation (search report)

[X] EP 0618614 A2 19941005 - HITACHI CHEMICAL CO LTD [JP]
[X] US 5406124 A 19950411 - MORITA MORITSUGU [JP], et al
[X] US 5294835 A 19940315 - IGARASHI KAZUMASA [JP], et al
[X] EP 0384036 A2 19900829 - HITACHI CHEMICAL CO LTD [JP]
[X] US 5037862 A 19910806 - NISHIZAWA HIROSHI [JP], et al
[X] PATENT ABSTRACTS OF JAPAN vol. 014, no. 187 (E - 0917) 16 April 1990 (1990-04-16)
[X] PATENT ABSTRACTS OF JAPAN vol. 016, no. 304 (C - 0959) 6 July 1992 (1992-07-06)
[X] PATENT ABSTRACTS OF JAPAN vol. 013, no. 233 (C - 601) 29 May 1989 (1989-05-29)
See references of WO 9854267A1

Designated contracting state (EPC)

AT BE CH CY DE DK ES FI FR GB GR IE IT LI LU MC NL PT SE

DOCDB simple family (publication)

EP 0984051 A1 20000308; EP 0984051 A4 20011205; JP H10330616 A 19981215; JP H10330724 A 19981215; KR 20010013221 A 20010226; TW 575637 B 20040211; US 6372859 B1 20020416; WO 9854267 A1 19981203

DOCDB simple family (application)

EP 98921865 A 19980528; JP 14225197 A 19970530; JP 14225297 A 19970530; JP 9802361 W 19980528; KR 19997011211 A 19980528; TW 87108317 A 19980528; US 42455099 A 19991126