Global Patent Index - EP 0987801 A2

EP 0987801 A2 2000-03-22 - Process of manufacturing an optoelectronic semiconductor device

Title (en)

Process of manufacturing an optoelectronic semiconductor device

Title (de)

Verfahren zur Herstellung eines optoelektronischen Bauelements

Title (fr)

Procédé de fabrication d'un composant semi-conducteur optoélectronique

Publication

EP 0987801 A2 (DE)

Application

EP 99118259 A

Priority

DE 19842038 A

Abstract (en)

Optoelectronic component production comprises position adjustment of lens coupling optics (9) while operating mounted laser chips (1). An optoelectronic component production process comprises: (a) providing a semiconductor wafer (2) with metallic structures (13) for electrically contacting and mechanically fixing laser chips (1) with beam paths parallel to the wafer; (b) positioning beam deflector lens coupling optics (9) on the wafer; (c) operating the laser chips and adjusting the spacing between the chip and the optics until the deflected laser light (11) provides a predetermined position of the optical image plane (15); and (d) fixing the optics in the adjusted position.

Abstract (de)

Bei einem Verfahren zur Herstellung eines optoelektronischen Bauelements wird ein Laserchip (1) auf einer mit metallischen Strukturen (13) versehenen Halbleiterscheibe (2) befestigt. Danach wird zu jedem Laserchip (1) eine den Strahlengang des Laserchips (1) umlenkende Linsenkoppeloptik (9) auf der Halbleiterscheibe (2) positioniert. Der Laserchip (1) wird betrieben und der Abstand zwischen dem Laserchip (1) und der Linsenkoppeloptik (9) wird so variiert und eingestellt, daß eine vorgegebene Strahlbedingung hinsichtlich der Lage der optischen Bildebene (15) erfüllt ist. <IMAGE>

IPC 1-7 (main, further and additional classification)

H01S 5/02; G02B 6/42

IPC 8 full level (invention and additional information)

G02B 6/42 (2006.01); H01S 5/022 (2006.01)

CPC (invention and additional information)

G02B 6/422 (2013.01); G02B 6/4214 (2013.01); G02B 6/424 (2013.01); G02B 6/4244 (2013.01); G02B 6/4259 (2013.01); H01S 5/02248 (2013.01); G02B 6/4238 (2013.01); G02B 6/4273 (2013.01); G02B 6/4286 (2013.01); H01S 5/02284 (2013.01); H01S 5/02292 (2013.01); H01S 5/0683 (2013.01)

Designated contracting state (EPC)

DE FR GB IT NL

EPO simple patent family

EP 0987801 A2 20000322; EP 0987801 A3 20000607; EP 0987801 B1 20020731; JP 2000091688 A 20000331; JP 3486378 B2 20040113; US 6271049 B1 20010807

INPADOC legal status


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