EP 0992066 A1 20000412 - SEMICONDUCTOR CIRCUIT DEVICE AND METHOD FOR THE PRODUCTION THEREOF
Title (en)
SEMICONDUCTOR CIRCUIT DEVICE AND METHOD FOR THE PRODUCTION THEREOF
Title (de)
HALBLEITERSCHALTUNGSVORRICHTUNG UND VERFAHREN ZUR HERSTELLUNG
Title (fr)
CIRCUIT A SEMI-CONDUCTEUR ET PROCEDE DE FABRICATION DUDIT CIRCUIT
Publication
Application
Priority
- DE 9801741 W 19980624
- DE 19726881 A 19970624
Abstract (en)
[origin: DE19726881A1] The invention relates to a monolithic integrated semiconductor circuit device (1), comprising a semiconductor substrate (2), in which or on which several circuit elements are configured, electrically interconnected and optionally connected to other contact points, especially those arranged on the edge of the semiconductor substrate (2), by means of conductor patterns (4, 5, 6), which are included in several contact planes (Poly-Si, M1, M2, M3), beginning with a first (poly-Si) plane which is the closest to the main surface (3) of the semiconductor substrate (2) and ranging to a final contact plane (M3). A protection facility consisting of interruptable fuses (8) or connectable anti-fuses is configured at least in sections on the basis of the conductor pattern (6) of the penultimate contact plane (M2). The invention also relates to a method for producing such monolithic integrated semiconductor circuit device (1).
IPC 1-7
IPC 8 full level
H01L 23/525 (2006.01)
CPC (source: EP US)
H01L 23/5252 (2013.01 - EP US); H01L 23/5256 (2013.01 - EP US); H01L 2924/0002 (2013.01 - EP US)
Citation (search report)
See references of WO 9859370A1
Designated contracting state (EPC)
DE FR GB IE
DOCDB simple family (publication)
DE 19726881 A1 19990107; EP 0992066 A1 20000412; US 6310396 B1 20011030; WO 9859370 A1 19981230
DOCDB simple family (application)
DE 19726881 A 19970624; DE 9801741 W 19980624; EP 98941230 A 19980624; US 47222199 A 19991227