Global Patent Index - EP 0993687 A1

EP 0993687 A1 2000-04-19 - ACTIVE LARGE AREA AVALANCHE PHOTODIODE ARRAY

Title (en)

ACTIVE LARGE AREA AVALANCHE PHOTODIODE ARRAY

Title (de)

AKTIVE GROSSFLÄCHIGE MATRIX AUS LAWINENPHTODIODEN

Title (fr)

RESEAU DE PHOTODIODES A AVALANCHE DE GRANDE SURFACE

Publication

EP 0993687 A1 (EN)

Application

EP 98930496 A

Priority

  • US 9813166 W
  • US 88205597 A
  • US 88190697 A

Abstract (en)

[origin: WO9859373A1] A large area avalanche photodiode device (300) that has a plurality of contacts (312) formed on a bottom side that are isolated from each other by various kinds of isolation structures. In one embodiment, a cavity (310) is formed in one layer of the avalanche photodiode that extends to a depletion region that exists in the layer as a result of a voltage applied to the device. The plurality of contacts are formed in the cavity so that each of the contacts are positioned substantially adjacent the depletion region. In another embodiment, a plurality of contacts are formed in a cavity and an isolation structure comprised of a grid of semiconductor material (340) is formed so as to be interposed between adjacent contacts. The isolation structure preferably forms a p-n junction with the surrounding semiconductor material and the p-n junction provides isolation between adjacent contacts. Preferably, the inner surface of the cavity is distal from the boundary of the depletion region, however, the isolation structure preferably extends into the depletion region. In another embodiment, a voltage is applied to the isolation structure so that a depletion region is formed in the surrounding semiconductor material so that adjacent contacts are electrically isolated from each other by a combination of a p-n junction and a high resistivity depletion layer.

IPC 1-7 (main, further and additional classification)

H01L 27/146

IPC 8 full level (invention and additional information)

H01L 27/146 (2006.01); H01L 31/107 (2006.01)

CPC (invention and additional information)

H01L 31/107 (2013.01); H01L 27/1446 (2013.01)

Citation (search report)

See references of WO 9859373A1

Designated contracting state (EPC)

AT BE CH DE DK ES FI FR GB GR IE IT LI LU MC NL PT SE

EPO simple patent family

WO 9859373 A1 19981230; AU 7987498 A 19990104; CA 2294929 A1 19981230; EP 0993687 A1 20000419; JP 2002506573 A 20020226

INPADOC legal status


2002-07-10 [18D] DEEMED TO BE WITHDRAWN

- Effective date: 20020103

2000-05-03 [RBV] DESIGNATED CONTRACTING STATES (CORRECTION):

- Designated State(s): AT BE CH DE DK ES FI FR GB GR IE IT LI LU MC NL PT SE

2000-04-19 [17P] REQUEST FOR EXAMINATION FILED

- Effective date: 20000124

2000-04-19 [AK] DESIGNATED CONTRACTING STATES:

- Kind Code of Ref Document: A1

- Designated State(s): AT BE CH DE DK ES FI FR GB GR IE IT LI LU MC NL PT SE