EP 0995227 A4 20000705 - A CONTROLLED CLEAVAGE PROCESS

Title (en)

A CONTROLLED CLEAVAGE PROCESS

Title (de)

KONTROLLIERTES SPALTUNGSVERFAHREN

Title (fr)

PROCEDE DE CLIVAGE CONTROLE

Publication

EP 0995227 A4 20000705 (EN)

Application

EP 98924756 A 19980511

Priority

US 9809567 W 19980511
US 4627697 P 19970512
US 2611598 A 19980219
US 2602798 A 19980219

Abstract (en)

[origin: WO9852216A1] A technique for forming a film of material (12) from a donor substrate (10). The technique has a step of introducing energetic particles (22) in a selected manner through a surface of a donor substrate (10) to a selected depth (20) underneath the surface, where the particles have a relatively high concentration to define a donor substrate material (12) above the selected depth and the particles for a pattern at the selected depth. An energy source such as pressurized fluid is directed to a selected region of the donor substrate to initiate a controlled cleaving action of the substrate (10) at the selected depth (20), whereupon the cleaving action provides an expanding cleave front to free the donor material from a remaining portion of the donor substrate.

IPC 1-7

H01L 21/304; H01L 21/20; H01L 21/762; B26F 3/00; B26D 3/28; H01L 21/425

IPC 8 full level

B26D 3/28 (2006.01); B26F 3/00 (2006.01); H01L 21/02 (2006.01); H01L 21/20 (2006.01); H01L 21/265 (2006.01); H01L 21/304 (2006.01); H01L 21/425 (2006.01); H01L 21/762 (2006.01); H01L 27/12 (2006.01)

CPC (source: EP)

B26D 3/28 (2013.01); B26F 3/00 (2013.01); B26F 3/002 (2013.01); H01L 21/26506 (2013.01); H01L 21/76254 (2013.01); H01L 27/1203 (2013.01)

Citation (search report)

[XY] EP 0703609 A1 19960327 - COMMISSARIAT ENERGIE ATOMIQUE [FR]
[YA] EP 0397237 A1 19901114 - PHILIPS NV [NL]
[PX] EP 0793263 A2 19970903 - CANON KK [JP]
[E] EP 0843344 A1 19980520 - CANON KK [JP]
[E] EP 0867921 A2 19980930 - CANON KK [JP]
[A] US 4466852 A 19840821 - BELTZ RICHARD K [US], et al
[A] US 5213451 A 19930525 - FRANK WALTER [DE], et al
[A] LU X ET AL: "SOI MATERIAL TECHNOLOGY USING PLASMA IMMERSION ION IMPLANTATION", PROCEEDINGS OF THE ANNUAL SOS/SOI TECHNOLOGY CONFERENCE. (FROM 1991 PROCEEDINGS OF THE INTERNATIONAL SOI CONFERENCE.) SILICON-ON-INSULATOR TECHNOLOGY AND DEVICES,US,NEW YORK, NY: IEEE, 1996, pages 48 - 49, XP000736841, ISBN: 0-7803-3316-0
See references of WO 9852216A1

Designated contracting state (EPC)

DE FR GB IE IT NL

DOCDB simple family (publication)

WO 9852216 A1 19981119; AU 7685198 A 19981208; CA 2290104 A1 19981119; CN 1146973 C 20040421; CN 1255237 A 20000531; EP 0995227 A1 20000426; EP 0995227 A4 20000705; JP 2001525991 A 20011211

DOCDB simple family (application)

US 9809567 W 19980511; AU 7685198 A 19980511; CA 2290104 A 19980511; CN 98804976 A 19980511; EP 98924756 A 19980511; JP 54937198 A 19980511