EP 0996977 A1 20000503 - ELECTRICAL BONDING OF A SEMICONDUCTOR JUNCTION
Title (en)
ELECTRICAL BONDING OF A SEMICONDUCTOR JUNCTION
Title (de)
KONTAKTIERUNG EINER HALBLEITERZONE
Title (fr)
METALLISATION D'UNE JONCTION SEMI-CONDUCTRICE
Publication
Application
Priority
- DE 9801987 W 19980715
- DE 19730327 A 19970715
Abstract (en)
[origin: WO9904427A1] The invention concerns a method for the electrical bonding of semiconductor components, and a corresponding semiconductor component obtained by said method. A method is disclosed for bonding a buried semiconductor coat (1), via a feedthrough (4) Said method consists in producing the feedthrough (4) in an insulating layer (2) for the electrical bonding of at least one buried semiconductor coat (1), and is characterised in that it comprises steps consisting in: producing a highly doped polysilicon layer (7) on the insulating layer surface (2), the feedthrough (4) being filled at least partially with highly doped polysilicon, and in applying a metal coating (3) on said highly doped polysilicon layer (7) to produce ohmic contact outwards.
IPC 1-7
IPC 8 full level
H01L 21/28 (2006.01); H01L 21/336 (2006.01); H01L 21/768 (2006.01); H01L 23/48 (2006.01); H01L 29/78 (2006.01)
CPC (source: EP US)
H01L 21/76877 (2013.01 - EP US); H01L 2924/0002 (2013.01 - EP US)
Citation (search report)
See references of WO 9904427A1
Designated contracting state (EPC)
DE FR GB IE IT
DOCDB simple family (publication)
WO 9904427 A1 19990128; EP 0996977 A1 20000503; JP 2001510942 A 20010807; US 6281119 B1 20010828
DOCDB simple family (application)
DE 9801987 W 19980715; EP 98944992 A 19980715; JP 2000503551 A 19980715; US 48478000 A 20000118