EP 0996981 A1 20000503 - HIGH-VOLTAGE EDGE TERMINATION FOR PLANAR STRUCTURES
Title (en)
HIGH-VOLTAGE EDGE TERMINATION FOR PLANAR STRUCTURES
Title (de)
HOCHVOLT-RANDABSCHLUSS FÜR PLANARSTRUKTUREN
Title (fr)
ELEMENT DE TERMINAISON MARGINAL HAUTE TENSION POUR STRUCTURES DE TYPE PLANAR
Publication
Application
Priority
- DE 9900568 W 19990303
- DE 19815851 A 19980408
Abstract (en)
[origin: WO9953550A1] The invention relates to a high-voltage edge termination for planar structures which comprise a semiconductor body (1 to 4) of a first conduction type. At least one of the magnetoresistors (7, 17) which is separated from the semiconductor body by an insulating layer (9) is provided on the same in the edge area thereof. Floating regions (5, 15, 25) of the second conduction type are provided in the edge area of the semiconductor body (1 to 4). The floating regions are separated from one another in such a way that the zones between the floating regions (5, 15, 25) are cleared when a voltage which is lower in comparison to the breakdown voltage of the semiconductor body (1 to 4) is applied to the floating regions (5, 15, 25).
IPC 1-7
IPC 8 full level
H01L 29/872 (2006.01); H01L 29/06 (2006.01); H01L 29/40 (2006.01); H01L 29/47 (2006.01); H01L 29/739 (2006.01); H01L 29/78 (2006.01); H01L 29/861 (2006.01)
CPC (source: EP US)
H01L 29/0623 (2013.01 - EP US); H01L 29/0634 (2013.01 - EP US); H01L 29/402 (2013.01 - EP US); H01L 29/7811 (2013.01 - EP US); H01L 29/7813 (2013.01 - EP US); H01L 29/0615 (2013.01 - EP US); H01L 29/0653 (2013.01 - EP US)
Citation (search report)
See references of WO 9953550A1
Designated contracting state (EPC)
DE FR GB IE IT
DOCDB simple family (publication)
WO 9953550 A1 19991021; EP 0996981 A1 20000503; JP 2002503401 A 20020129; US 6376890 B1 20020423
DOCDB simple family (application)
DE 9900568 W 19990303; EP 99917767 A 19990303; JP 55101699 A 19990303; US 45722599 A 19991208