Global Patent Index - EP 0998751 A1

EP 0998751 A1 2000-05-10 - METHOD FOR WASHING SILICON WAFER

Title (en)

METHOD FOR WASHING SILICON WAFER

Title (de)

VERFAHREN ZUM WASCHEN EINER SILIZIUMSCHEIBE

Title (fr)

PROCEDE DE LAVAGE D'UNE TRANCHE DE SILICIUM

Publication

EP 0998751 A1 (EN)

Application

EP 98937071 A

Priority

  • JP 19595997 A
  • US 9815358 W

Abstract (en)

[origin: WO9905704A1] A method for washing a silicon wafer after an etching treatment includes the steps of: (a) subjecting a silicon wafer after etching to washing and reforming with using a washing-reforming solution, and (b) forming an oxidized film on a surface of the silicon wafer with using an oxidized film forming solution.

IPC 1-7 (main, further and additional classification)

H01L 21/00

IPC 8 full level (invention and additional information)

B08B 3/08 (2006.01); H01L 21/304 (2006.01); H01L 21/316 (2006.01)

CPC (invention and additional information)

H01L 21/02238 (2013.01); H01L 21/02307 (2013.01); H01L 21/31662 (2013.01)

Citation (search report)

See references of WO 9905704A1

Designated contracting state (EPC)

DE FR GB IT

EPO simple patent family

WO 9905704 A1 19990204; CN 1265223 A 20000830; EP 0998751 A1 20000510; JP H1140527 A 19990212

INPADOC legal status


2002-09-04 [18D] DEEMED TO BE WITHDRAWN

- Ref Legal Event Code: 18D

- Effective date: 20020227

2001-10-04 [17Q] FIRST EXAMINATION REPORT

- Ref Legal Event Code: 17Q

- Effective date: 20010816

2000-05-10 [17P] REQUEST FOR EXAMINATION FILED

- Ref Legal Event Code: 17P

- Effective date: 20000128

2000-05-10 [AK] DESIGNATED CONTRACTING STATES:

- Ref Legal Event Code: AK

- Designated State(s): DE FR GB IT