Global patent index - EP 0998754 A1

EP 0998754 A1 2000-05-10 - METHOD FOR PRODUCING A SEMICONDUCTOR COMPONENT CONTROLLED BY FIELD EFFECT

Title (en)

METHOD FOR PRODUCING A SEMICONDUCTOR COMPONENT CONTROLLED BY FIELD EFFECT

Title (de)

HERSTELLUNGSVERFAHREN FÜR EIN DURCH FELDEFFEKT GESTEUERTES HALBLEITERBAUELEMENT

Title (fr)

PROCEDE POUR LA FABRICATION D'UN COMPOSANT A SEMI-CONDUCTEURS COMMANDE PAR EFFET DE CHAMP

Publication

EP 0998754 A1 (DE)

Application

EP 98947305 A

Priority

  • DE 9802022 W
  • DE 19731496 A

Abstract (en)

[origin: DE19731496A1] The invention relates to a method for producing semiconductor components controlled by field effect e.g. but not exclusively MIS power transistors, wherein said semiconductor components comprise a substrate of a first capacity type, covered by a gate insulating layer. The inventive method for producing semiconductor components controlled by field effect and comprising a semiconductor substrate(1) of a first capacity type and a gate insulating layer(2) on the surface(3) of said substrate (1) consists inter alia in making a second capacity type trough(4) in the semiconductor substrate (1) by implanting first impurities and is characterized by steps undertaken to produce a semiconductor layer (8,9) of a first given thickness on the gate insulating layer (2) before producing the trough (4) and reducing the semiconductor layer (8,9) in a given area to obtain a residual layer (6) of a second given thickness, so that the semiconductor layer (9) acts as an implantation barrier outside the given area when the trough (4) is produced.

IPC 1-7 (main, further and additional classification)

H01L 21/336; H01L 29/78

IPC 8 full level (invention and additional information)

H01L 21/336 (2006.01); H01L 29/423 (2006.01); H01L 29/78 (2006.01); H01L 29/10 (2006.01)

CPC (invention and additional information)

H01L 29/7802 (2013.01); H01L 29/42376 (2013.01); H01L 29/1095 (2013.01); H01L 29/41766 (2013.01)

Citation (search report)

See references of WO 9905714A1

Designated contracting state (EPC)

DE FR GB IE IT

EPO simple patent family

DE 19731496 A1 19990128; EP 0998754 A1 20000510; JP 2001511601 A 20010814; US 6248620 B1 20010619; WO 9905714 A1 19990204

INPADOC legal status

2014-06-04 [18D] DEEMED TO BE WITHDRAWN

- Ref Legal Event Code: 18D

- Effective date: 20140103

2010-06-02 [RAP1] TRANSFER OF RIGHTS OF AN EP PUBLISHED APPLICATION

- Owner name: INFINEON TECHNOLOGIES AG

- Ref Legal Event Code: RAP1

2007-07-04 [17Q] FIRST EXAMINATION REPORT

- Ref Legal Event Code: 17Q

- Effective date: 20030423

2003-06-04 [17Q] FIRST EXAMINATION REPORT

- Ref Legal Event Code: 17Q

- Effective date: 20030423

2000-05-10 [17P] REQUEST FOR EXAMINATION FILED

- Ref Legal Event Code: 17P

- Effective date: 20000121

2000-05-10 [AK] DESIGNATED CONTRACTING STATES:

- Ref Legal Event Code: AK

- Designated State(s): DE FR GB IE IT