EP 0998755 A1 20000510 - METHOD FOR PRODUCING A II-VI SEMI-CONDUCTING COMPONENT
Title (en)
METHOD FOR PRODUCING A II-VI SEMI-CONDUCTING COMPONENT
Title (de)
VERFAHREN ZUM HERSTELLEN EINES II-VI-HALBLEITER-BAUELEMENTS
Title (fr)
PROCEDE DE PRODUCTION D'UN COMPOSANT A SEMI-CONDUCTEUR II-VI
Publication
Application
Priority
- DE 9801883 W 19980708
- DE 19729186 A 19970708
Abstract (en)
[origin: DE19729186A1] The invention relates to a method for producing a II-VI semi-conducting component. This method is characterized in that an active layer series (11), comprising at least one Se- and/or S-containing II-VI semi-conducting layer, is applied to a substrate (101). A Se-free II-VI intermediate layer (103) based on BeTe is first of all formed on the substrate by epitaxy in a substantially Se- and S-free first epitaxial chamber (211, 221). The active layer series (113) is then formed by epitaxy on the Se-free II-VI semi-conducting layer (103).
IPC 1-7
IPC 8 full level
H01L 21/36 (2006.01); H01L 21/363 (2006.01); H01L 21/365 (2006.01); H01L 33/00 (2010.01); H01L 33/12 (2010.01); H01L 33/28 (2010.01); H01L 33/40 (2010.01); H01S 5/327 (2006.01)
CPC (source: EP KR US)
H01L 21/02395 (2013.01 - EP US); H01L 21/02439 (2013.01 - EP US); H01L 21/0248 (2013.01 - EP US); H01L 21/02485 (2013.01 - EP US); H01L 21/02505 (2013.01 - EP US); H01L 21/02557 (2013.01 - EP US); H01L 21/0256 (2013.01 - EP US); H01L 21/02631 (2013.01 - EP US); H01L 21/34 (2013.01 - KR); H01S 5/327 (2013.01 - EP US)
Citation (search report)
See references of WO 9903144A1
Designated contracting state (EPC)
DE FR GB
DOCDB simple family (publication)
DE 19729186 A1 19990114; EP 0998755 A1 20000510; JP 2001510281 A 20010731; KR 20010021582 A 20010315; US 6399473 B1 20020604; WO 9903144 A1 19990121
DOCDB simple family (application)
DE 19729186 A 19970708; DE 9801883 W 19980708; EP 98943649 A 19980708; JP 2000502536 A 19980708; KR 20007000140 A 20000107; US 48075800 A 20000110