EP 0998758 A1 20000510 - DRY-ETCHING OF INDIUM AND TIN OXIDES
Title (en)
DRY-ETCHING OF INDIUM AND TIN OXIDES
Title (de)
TROCKENÄTZEN VON INDIUM UND ZINNOXYDEN
Title (fr)
GRAVURE A SEC D'OXYDES D'INDIUM ET D'ETAIN
Publication
Application
Priority
- US 9813139 W 19980623
- US 88132397 A 19970625
Abstract (en)
[origin: WO9859379A1] An etch method includes providing a layer made of a material selected from the group consisting of an indium oxide (InO), a tin oxide (SnO), a mixture of indium and tin oxides, a compound of indium and of tin and of oxygen having the general formulation: InxSnyOz where z is substantially greater than zero but less than 100 % and where the sum x+y fills the remainder of the 100 %, and a mixture of the preceding ones of the group members. A reactive gas including hydrogen bromide (HBr) and hydrogen iodide (HI) is supplied to a vicinity of the material layer. Also, an electric field is supplied to react the supplied reactive gas with the material layer so as to form volatile byproducts of reactive gas and the material layer.
IPC 1-7
IPC 8 full level
H01L 21/302 (2006.01); H01L 21/3213 (2006.01)
CPC (source: EP KR)
H01L 21/3065 (2013.01 - KR); H01L 21/32136 (2013.01 - EP)
Citation (search report)
See references of WO 9859379A1
Designated contracting state (EPC)
BE DE GB NL
DOCDB simple family (publication)
WO 9859379 A1 19981230; EP 0998758 A1 20000510; JP 2002506572 A 20020226; KR 100489921 B1 20050517; KR 20010020474 A 20010315
DOCDB simple family (application)
US 9813139 W 19980623; EP 98931554 A 19980623; JP 50502599 A 19980623; KR 19997012092 A 19991221