EP 1002339 A1 20000524 - CONTACT ARRANGEMENT FOR A PLANAR, INTEGRABLE SEMICONDUCTOR ARRANGEMENT AND METHOD FOR PRODUCING SAID CONTACT ARRANGEMENT
Title (en)
CONTACT ARRANGEMENT FOR A PLANAR, INTEGRABLE SEMICONDUCTOR ARRANGEMENT AND METHOD FOR PRODUCING SAID CONTACT ARRANGEMENT
Title (de)
KONTAKTANORDNUNG FÜR EINE PLANARE, INTEGRIERBARE HALBLEITERANORDNUNG UND VERFAHREN ZUR HERSTELLUNG DIESER KONTAKTANORDNUNG
Title (fr)
AGENCEMENT DE CONTACTS DESTINE A UN ENSEMBLE SEMICONDUCTEUR INTEGRE ET DE TYPE PLANAR ET PROCEDE POUR REALISER CET AGENCEMENT DE CONTACTS
Publication
Application
Priority
- DE 9800805 W 19980314
- DE 19711165 A 19970318
Abstract (en)
[origin: DE19711165A1] The aim of the invention is to design a contact arrangement for a planar, integrable semiconductor structure, said semiconductor structure being configured especially as a combination of vertical FET cells (8), in such a way as to produce a maximized duct cross section for closed FET cells (8) and an enlarged source-contact surface. To this end, all of the contact holes which are metallized for contacting the semiconductor layers and areas lie on a common horizontal plane and are configured as a recess which diminishes as it reaches the center. Said recess projects downwards to the lower part of the vertical extension of the layer forming the source (4) or to a depth of approximately 500 nm in the substrate (15) or the layer which is to be contacted. During production of the arrangement, the oxide layer (2, 3) on the substrate surface is opened locally during a first anisotropic etching step using one mask only, in order to create the contact holes for all the layers and areas which have to be contacted. In a second anisotropic dry etching step, a recess which diminishes in the center is then etched into the opened contact holes in a self-adjusting manner.
IPC 1-7
IPC 8 full level
H01L 21/336 (2006.01); H01L 29/06 (2006.01); H01L 29/78 (2006.01); H01L 29/417 (2006.01); H01L 29/423 (2006.01)
CPC (source: EP US)
H01L 29/0696 (2013.01 - EP); H01L 29/7802 (2013.01 - EP US); H01L 29/7813 (2013.01 - EP); H01L 29/41741 (2013.01 - EP); H01L 29/41766 (2013.01 - EP); H01L 29/4238 (2013.01 - EP); H01L 29/7809 (2013.01 - EP)
Citation (search report)
See references of WO 9842025A1
Designated contracting state (EPC)
AT BE DE DK FI FR GB IE IT NL SE
DOCDB simple family (publication)
DE 19711165 A1 19980924; EP 1002339 A1 20000524; JP 2001515658 A 20010918; WO 9842025 A1 19980924
DOCDB simple family (application)
DE 19711165 A 19970318; DE 9800805 W 19980314; EP 98916864 A 19980314; JP 54003198 A 19980314