EP 1008171 A1 20000614 - METHOD FOR THERMAL SELF-HEALING OF AN SiC SEMICONDUCTOR AREA DOPED BY MEANS OF IMPLANTATION AND A SiC BASED SEMICONDUCTOR COMPONENT
Title (en)
METHOD FOR THERMAL SELF-HEALING OF AN SiC SEMICONDUCTOR AREA DOPED BY MEANS OF IMPLANTATION AND A SiC BASED SEMICONDUCTOR COMPONENT
Title (de)
VERFAHREN ZUM THERMISCHEN AUSHEILEN EINES DURCH IMPLANTATION DOTIERTEN SiC-HALBLEITERGEBIETES UND HALBLEITERBAUELEMENT AUF SiC-BASIS
Title (fr)
PROCEDE POUR L'AUTOREGENERATION THERMIQUE D'UNE REGION SEMICONDUCTRICE DE SiC DOPEE PAR IMPLANTATION ET COMPOSANT A SEMI-CONDUCTEURS A BASE DE SiC
Publication
Application
Priority
- DE 9802348 W 19980813
- DE 19736479 A 19970821
Abstract (en)
[origin: WO9910920A1] An SiC semiconductor area (4) doped by means of implantation is cooled from a given initial temperature of at least 1000 DEG C to a lower final temperature at a maximum cooling rate of 100 DEG C per minute. The semiconductor component contains a self-healed p-n junction (5) obtained according to said method and has a high blocking ability.
IPC 1-7
IPC 8 full level
H01L 21/04 (2006.01); H01L 29/24 (2006.01)
CPC (source: EP)
H01L 21/046 (2013.01); H01L 29/1608 (2013.01); H01L 29/66068 (2013.01)
Citation (search report)
See references of WO 9910920A1
Designated contracting state (EPC)
DE FR IT
DOCDB simple family (publication)
WO 9910920 A1 19990304; CN 1267393 A 20000920; EP 1008171 A1 20000614
DOCDB simple family (application)
DE 9802348 W 19980813; CN 98808326 A 19980813; EP 98949885 A 19980813