Global Patent Index - EP 1008175 A4

EP 1008175 A4 20001018 - CAPPED INTERLAYER DIELECTRIC FOR CHEMICAL MECHANICAL POLISHING

Title (en)

CAPPED INTERLAYER DIELECTRIC FOR CHEMICAL MECHANICAL POLISHING

Title (de)

BEDECKTE DIELEKTRISCHE ZWISCHENSCHICHT ZUM CHEMISCH-MECHANISCHEN SCHLEIFEN

Title (fr)

COUCHE INTERMEDIAIRE DIELECTRIQUE COIFFEE POUR POLISSAGE CHIMICO-MECANIQUE

Publication

EP 1008175 A4 20001018 (EN)

Application

EP 96933088 A 19960923

Priority

  • US 9615201 W 19960923
  • US 53600795 A 19950929

Abstract (en)

[origin: WO9712393A1] A method of forming a novel high density interconnection structure. According to the present invention, first an insulating layer (206) is formed over a semiconductor substrate. The first insulating layer is then planarized. Next, a second insulating layer (212) is formed above the first planarized insulating layer. An opening is then etched through the first and second insulating layers. A conductive material (226) is then deposited into the opening and onto the top surface of the second insulating layer. Next, the conductive material is polished back from the second insulating layer so as to form a conductively filled opening which is substantially planar with the second insulating layer.

IPC 1-7

H01L 21/44

IPC 8 full level

H01L 21/28 (2006.01); H01L 21/304 (2006.01); H01L 21/768 (2006.01)

CPC (source: EP KR)

H01L 21/44 (2013.01 - KR); H01L 21/76801 (2013.01 - EP); H01L 21/76828 (2013.01 - EP)

Citation (search report)

Designated contracting state (EPC)

DE FR GB IE IT

DOCDB simple family (publication)

WO 9712393 A1 19970403; AU 7164596 A 19970417; CN 1203697 A 19981230; EP 1008175 A1 20000614; EP 1008175 A4 20001018; IL 123749 A0 19981030; JP H11512877 A 19991102; KR 19990063743 A 19990726; TW 304297 B 19970501

DOCDB simple family (application)

US 9615201 W 19960923; AU 7164596 A 19960923; CN 96198689 A 19960923; EP 96933088 A 19960923; IL 12374996 A 19960923; JP 51352797 A 19960923; KR 19980702210 A 19980325; TW 85109890 A 19960814