EP 1008179 A1 20000614 - METHOD FOR PRODUCING A MATRIX FROM THIN FILM TRANSISTORS WITH STORAGE CAPACITIES
Title (en)
METHOD FOR PRODUCING A MATRIX FROM THIN FILM TRANSISTORS WITH STORAGE CAPACITIES
Title (de)
VERFAHREN ZUR HERSTELLUNG EINER MATRIX AUS DÜNNSCHICHTTRANSISTOREN MIT SPEICHERKAPAZITÄTEN
Title (fr)
PROCEDES DE PRODUCTION D'UNE MATRICE A PARTIR DE TRANSISTORS A COUCHES MINCES PRESENTANT DES CAPACITES DE MEMOIRE
Publication
Application
Priority
- DE 9801759 W 19980626
- DE 19731090 A 19970719
Abstract (en)
[origin: DE19731090C1] Production of a matrix of thin film transistors (TFTs) with storage capacitors, especially for LCDs, involves: (a) applying and structuring a first conductive layer on a substrate to form column lines (32) and interposed portions of the row lines of the TFT matrix, transistor gate contacts and capacitor electrodes in a first masking step; (b) applying and structuring a TFT gate insulation, an undoped semiconductor layer and then a p- or n-doped TFT drain and source contact semiconductor layer in a second masking step; (c) applying and structuring a second transparent conductive layer to complete the row line portions (33.2), the drain and source contact metallisations (38), the capacitor top electrodes (39) and pixel electrodes (37) in a third masking step; (d) etching the doped semiconductor layer using the structured second conductive layer as mask; and (e) applying a transparent passivation. Also claimed is a similar process, in which the transparent conductive layer (preferably ITO) is applied and structured in step (a), the pixel electrodes are formed in step (a) and the conductive layer (preferably a metal such as Ta, Mo, Cr and/or Al) is applied and structured in step (c).
IPC 1-7
IPC 8 full level
G02F 1/136 (2006.01); G02F 1/1362 (2006.01); G02F 1/1368 (2006.01); H01L 21/336 (2006.01); H01L 21/77 (2006.01); H01L 21/84 (2006.01); H01L 23/52 (2006.01); H01L 27/12 (2006.01); H01L 29/786 (2006.01)
CPC (source: EP KR US)
G02F 1/136213 (2013.01 - EP); H01L 27/1214 (2013.01 - EP); H01L 27/124 (2013.01 - EP US); H01L 29/786 (2013.01 - KR)
Citation (search report)
See references of WO 9904428A1
Designated contracting state (EPC)
DE FR NL
DOCDB simple family (publication)
DE 19731090 C1 19981119; EP 1008179 A1 20000614; JP 2001510943 A 20010807; KR 20010022003 A 20010315; TW 377519 B 19991221; WO 9904428 A1 19990128
DOCDB simple family (application)
DE 19731090 A 19970719; DE 9801759 W 19980626; EP 98941232 A 19980626; JP 2000503552 A 19980626; KR 20007000570 A 20000118; TW 87110535 A 19980630