Global Patent Index - EP 1008179 A1

EP 1008179 A1 2000-06-14 - METHOD FOR PRODUCING A MATRIX FROM THIN FILM TRANSISTORS WITH STORAGE CAPACITIES

Title (en)

METHOD FOR PRODUCING A MATRIX FROM THIN FILM TRANSISTORS WITH STORAGE CAPACITIES

Title (de)

VERFAHREN ZUR HERSTELLUNG EINER MATRIX AUS DÜNNSCHICHTTRANSISTOREN MIT SPEICHERKAPAZITÄTEN

Title (fr)

PROCEDES DE PRODUCTION D'UNE MATRICE A PARTIR DE TRANSISTORS A COUCHES MINCES PRESENTANT DES CAPACITES DE MEMOIRE

Publication

EP 1008179 A1 (DE)

Application

EP 98941232 A

Priority

  • DE 9801759 W
  • DE 19731090 A

Abstract (en)

[origin: DE19731090C1] Production of a matrix of thin film transistors (TFTs) with storage capacitors, especially for LCDs, involves: (a) applying and structuring a first conductive layer on a substrate to form column lines (32) and interposed portions of the row lines of the TFT matrix, transistor gate contacts and capacitor electrodes in a first masking step; (b) applying and structuring a TFT gate insulation, an undoped semiconductor layer and then a p- or n-doped TFT drain and source contact semiconductor layer in a second masking step; (c) applying and structuring a second transparent conductive layer to complete the row line portions (33.2), the drain and source contact metallisations (38), the capacitor top electrodes (39) and pixel electrodes (37) in a third masking step; (d) etching the doped semiconductor layer using the structured second conductive layer as mask; and (e) applying a transparent passivation. Also claimed is a similar process, in which the transparent conductive layer (preferably ITO) is applied and structured in step (a), the pixel electrodes are formed in step (a) and the conductive layer (preferably a metal such as Ta, Mo, Cr and/or Al) is applied and structured in step (c).

IPC 1-7 (main, further and additional classification)

H01L 21/84; H01L 27/12

IPC 8 full level (invention and additional information)

G02F 1/136 (2006.01); G02F 1/1362 (2006.01); G02F 1/1368 (2006.01); H01L 21/336 (2006.01); H01L 21/77 (2006.01); H01L 21/84 (2006.01); H01L 23/52 (2006.01); H01L 27/12 (2006.01); H01L 29/786 (2006.01)

CPC (invention and additional information)

G02F 1/136213 (2013.01); H01L 27/1214 (2013.01)

Citation (search report)

See references of WO 9904428A1

Designated contracting state (EPC)

DE FR NL

EPO simple patent family

DE 19731090 C1 19981119; EP 1008179 A1 20000614; JP 2001510943 A 20010807; TW 377519 B 19991221; WO 9904428 A1 19990128

INPADOC legal status


2004-05-06 [18D] DEEMED TO BE WITHDRAWN

- Effective date: 20031031

2000-06-14 [17P] REQUEST FOR EXAMINATION FILED

- Effective date: 20000221

2000-06-14 [AK] DESIGNATED CONTRACTING STATES:

- Kind Code of Ref Document: A1

- Designated State(s): DE FR NL