EP 1008182 A1 20000614 - HIGH VOLTAGE COMPONENT AND METHOD FOR MAKING SAME
Title (en)
HIGH VOLTAGE COMPONENT AND METHOD FOR MAKING SAME
Title (de)
HOCHSPANNUNGSBAUELEMENT UND VERFAHREN ZU SEINER HERSTELLUNG
Title (fr)
COMPOSANT HAUTE TENSION ET SON PROCEDE DE PRODUCTION
Publication
Application
Priority
- DE 9800597 W 19980228
- DE 19735542 A 19970816
Abstract (en)
[origin: DE19735542A1] A high voltage component has a self-supporting n-doped semiconductor wafer with two or more series-connected sub-components, at least one of which has a p-region extending from the front face to the back face of the wafer. An Independent claim is also included for production of the above component by forming uniformly spaced-apart, parallel, stripe-like p-regions in a lightly n-doped semiconductor component, the p-regions extending from the front face to the back face of the wafer and dividing the wafer into parallel lightly n-doped regions.
IPC 1-7
H01L 27/08; H01L 27/144; H01L 29/06; H01L 21/761; H01L 29/87; H01L 31/111
IPC 8 full level
H01L 27/04 (2006.01); H01L 29/74 (2006.01); H01L 29/87 (2006.01); H01L 31/10 (2006.01); H01L 29/06 (2006.01)
CPC (source: EP US)
H01L 27/04 (2013.01 - EP US); H01L 29/87 (2013.01 - EP US); H01L 29/0684 (2013.01 - EP US)
Citation (search report)
See references of WO 9909597A1
Designated contracting state (EPC)
DE FR GB IT
DOCDB simple family (publication)
DE 19735542 A1 19990218; EP 1008182 A1 20000614; JP 2001516147 A 20010925; US 2002109193 A1 20020815; US 6617661 B2 20030909; WO 9909597 A1 19990225
DOCDB simple family (application)
DE 19735542 A 19970816; DE 9800597 W 19980228; EP 98914831 A 19980228; JP 2000510168 A 19980228; US 48591500 A 20000517