Global Patent Index - EP 1008184 A1

EP 1008184 A1 20000614 - LATERAL HIGH-VOLTAGE TRANSISTOR

Title (en)

LATERAL HIGH-VOLTAGE TRANSISTOR

Title (de)

LATERAL-HOCHSPANNUNGSTRANSISTOR

Title (fr)

TRANSISTOR HAUTE TENSION LATERAL

Publication

EP 1008184 A1 20000614 (DE)

Application

EP 99913117 A 19990317

Priority

  • DE 9900761 W 19990317
  • DE 19828191 A 19980624

Abstract (en)

[origin: DE19828191C1] A lateral high-voltage transistor has a semiconductor body composed of a weakly doped semiconductor substrate (1) of a first conductivity type, an epitaxial layer (2) of the opposite conductivity type applied to the semiconductor substrate (1), a drain electrode (3), a source electrode (5), a gate electrode (7) and a semiconductor region (4) of the first conductivity type provided below the gate electrode (7) and embedded in the epitaxial layer (2). Rows and lines of trenches (7) are provided in the semiconductor layer (2) between the source electrode (5) and the drain electrode (3), the walls of the trenches (8) being highly doped with a doping substance of the first conductivity type.

IPC 1-7

H01L 29/06; H01L 29/78

IPC 8 full level

H01L 29/06 (2006.01); H01L 29/78 (2006.01)

CPC (source: EP US)

H01L 29/0623 (2013.01 - EP US); H01L 29/0634 (2013.01 - EP US); H01L 29/7816 (2013.01 - EP US)

Citation (search report)

See references of WO 9967826A1

Designated contracting state (EPC)

DE FR GB IE IT

DOCDB simple family (publication)

DE 19828191 C1 19990729; EP 1008184 A1 20000614; JP 2002519852 A 20020702; US 6326656 B1 20011204; WO 9967826 A1 19991229

DOCDB simple family (application)

DE 19828191 A 19980624; DE 9900761 W 19990317; EP 99913117 A 19990317; JP 2000556403 A 19990317; US 51181300 A 20000224