EP 1008213 A1 20000614 - II-VI SEMICONDUCTOR LIGHT EMITTING DEVICE
Title (en)
II-VI SEMICONDUCTOR LIGHT EMITTING DEVICE
Title (de)
LICHTEMITTIERENDE VORRICHTUNG MIT II-VI HALBLEITERN
Title (fr)
DISPOSITIF EMETTEUR DE LUMIERE A SEMI-CONDUCTEURS II-VI
Publication
Application
Priority
- US 9814973 W 19980720
- US 92017997 A 19970825
Abstract (en)
[origin: WO9910956A1] A II-VI semiconductor light emitting device includes a II-VI semiconductor light emitting region and a II-VI semiconductor waveguide layer. A light absorbing layer is provided near the II-VI semiconductor waveguide layer, outside of the active region. The light absorbing layer absorbs extraneous radiation thereby reducing dark line defects (DLDs).
IPC 1-7
IPC 8 full level
H01L 33/00 (2006.01); H01L 33/28 (2010.01); H01S 5/10 (2006.01); H01S 5/327 (2006.01); H01S 5/00 (2006.01); H01S 5/22 (2006.01); H01S 5/223 (2006.01)
CPC (source: EP KR US)
H01L 33/28 (2013.01 - EP US); H01S 5/10 (2013.01 - EP US); H01S 5/327 (2013.01 - EP KR US); H01S 5/0021 (2013.01 - EP US); H01S 5/0655 (2013.01 - EP US); H01S 5/2219 (2013.01 - EP US); H01S 5/2231 (2013.01 - EP US)
Citation (search report)
See references of WO 9910956A1
Designated contracting state (EPC)
DE FR GB IT
DOCDB simple family (publication)
WO 9910956 A1 19990304; AU 8575798 A 19990316; CN 1114980 C 20030716; CN 1268256 A 20000927; DE 69839560 D1 20080710; EP 1008213 A1 20000614; EP 1008213 B1 20080528; JP 2002519855 A 20020702; JP 4335451 B2 20090930; KR 100601116 B1 20060719; KR 20010023219 A 20010326; MY 117926 A 20040830; US 5963573 A 19991005
DOCDB simple family (application)
US 9814973 W 19980720; AU 8575798 A 19980720; CN 98808435 A 19980720; DE 69839560 T 19980720; EP 98936915 A 19980720; JP 2000556531 A 19980720; KR 20007001848 A 20000223; MY PI9803824 A 19980821; US 92017997 A 19970825