Global Patent Index - EP 1008231 A2

EP 1008231 A2 20000614 - POWER MODULE WITH A CIRCUIT ARRANGEMENT COMPRISING ACTIVE SEMICONDUCTOR COMPONENTS AND PASSIVE COMPONENTS, AND METHOD FOR PRODUCING SAME

Title (en)

POWER MODULE WITH A CIRCUIT ARRANGEMENT COMPRISING ACTIVE SEMICONDUCTOR COMPONENTS AND PASSIVE COMPONENTS, AND METHOD FOR PRODUCING SAME

Title (de)

LEISTUNGSMODUL MIT EINER AKTIVE HALBLEITERBAUELEMENTE UND PASSIVE BAUELEMENTE AUFWEISENDEN SCHALTUNGSANORDNUNG SOWIE HERSTELLUNGSVERFAHREN HIERZU

Title (fr)

MODULE DE PUISSANCE COMPORTANT UN CIRCUIT POURVU DE COMPOSANTS A SEMICONDUCTEUR ACTIFS ET DE COMPOSANTS PASSIFS, ET SON PROCEDE DE PRODUCTION

Publication

EP 1008231 A2 20000614 (DE)

Application

EP 98906929 A 19980114

Priority

  • DE 19700963 A 19970114
  • EP 9800655 W 19980114

Abstract (en)

[origin: DE19700963A1] The invention relates to a power module with a circuit arrangement comprising active semiconductor components and passive components, and a circuit support. At least a part of the active semiconductor components are soldered onto a DCB substrate and at least a part of the passive components is printed onto at least one ceramic support using a thick-film technique. The upper side of the DCB substrate is structured in such a way that it forms conductor strips and contact pads for receiving the active semiconductor components and the passive components of the circuit arrangement. On the ceramic support, for each passive component is printed, using a thick-film technique, a first printed layer and at least one contact area as second printed layer laterally adjoining the first printed layer. The ceramic supports for the passive components printed by thick-film technique are connected via the at least one contact area with the corresponding contact pad(s) of the DCB substrate by a soldering joint.

IPC 1-7

H02P 1/00

IPC 8 full level

H01L 25/07 (2006.01); H01L 25/16 (2006.01); H01L 25/18 (2006.01); H05K 3/34 (2006.01); H05K 1/03 (2006.01)

CPC (source: EP US)

H01L 25/162 (2013.01 - EP US); H05K 3/3442 (2013.01 - EP US); H01L 2224/16 (2013.01 - EP US); H01L 2224/32225 (2013.01 - EP US); H01L 2224/48227 (2013.01 - EP US); H01L 2224/48472 (2013.01 - EP US); H01L 2224/73265 (2013.01 - EP US); H01L 2924/01067 (2013.01 - EP US); H01L 2924/01079 (2013.01 - EP US); H01L 2924/19041 (2013.01 - EP US); H01L 2924/30107 (2013.01 - EP US); H05K 1/0306 (2013.01 - EP US); H05K 2201/0355 (2013.01 - EP US); H05K 2201/10636 (2013.01 - EP US); Y02P 70/50 (2015.11 - EP US)

Citation (search report)

See references of WO 9832213A2

Designated contracting state (EPC)

AT DE FR GB IT SE

DOCDB simple family (publication)

DE 19700963 A1 19980716; DE 19700963 C2 20001221; EP 1008231 A2 20000614; JP 2001508240 A 20010619; US 2002008967 A1 20020124; US 6344973 B1 20020205; WO 9832213 A2 19980723; WO 9832213 A3 19990318

DOCDB simple family (application)

DE 19700963 A 19970114; EP 9800655 W 19980114; EP 98906929 A 19980114; JP 53376998 A 19980114; US 34152798 A 19980114; US 34152799 A 19990830