EP 1010204 A1 20000621 - SEMICONDUCTOR STRUCTURE COMPRISING AN ALPHA SILICON CARBIDE ZONE, AND USE OF SAID SEMICONDUCTOR STRUCTURE
Title (en)
SEMICONDUCTOR STRUCTURE COMPRISING AN ALPHA SILICON CARBIDE ZONE, AND USE OF SAID SEMICONDUCTOR STRUCTURE
Title (de)
HALBLEITERSTRUKTUR MIT EINEM ALPHA-SILIZIUMCARBIDBEREICH SOWIE VERWENDUNG DIESER HALBLEITERSTRUKTUR
Title (fr)
STRUCTURE SEMI-CONDUCTRICE COMPORTANT UNE ZONE EN CARBURE DE SILICIUM ALPHA ET UTILISATION DE CETTE STRUCTURE SEMI-CONDUCTRICE
Publication
Application
Priority
- DE 9800931 W 19980401
- DE 19736211 A 19970820
Abstract (en)
[origin: WO9909598A1] The invention concerns a semiconductor structure (HS) comprising at least an alpha silicon carbide zone (3, 10, 11) and an electrical insulation zone (13a), consisting for example of an oxide coating, between which is located an interface (20). The selection of an alpha silicon carbide polytype, whereof the forbidden band is smaller than that of H6 silicon carbide polytype, for at least one zone close to the interface, results in high mobility of charge carriers in said zone.
IPC 1-7
IPC 8 full level
H01L 29/24 (2006.01); H01L 29/739 (2006.01); H01L 29/78 (2006.01)
CPC (source: EP US)
H01L 29/1608 (2013.01 - EP US); H01L 29/7395 (2013.01 - EP US); H01L 29/7802 (2013.01 - EP US); H01L 29/7397 (2013.01 - EP US); H01L 29/7813 (2013.01 - EP US)
Citation (search report)
See references of WO 9909598A1
Designated contracting state (EPC)
CH DE FI FR GB IE IT LI NL PT SE
DOCDB simple family (publication)
WO 9909598 A1 19990225; CN 1267397 A 20000920; EP 1010204 A1 20000621; US 6316791 B1 20011113
DOCDB simple family (application)
DE 9800931 W 19980401; CN 98808324 A 19980401; EP 98928113 A 19980401; US 52315800 A 20000222