EP 1012571 A1 20000628 - AN APPARATUS FOR ANALYZING THE CHARACTERISTICS OF A SEMICONDUCTOR WAFER AND METHOD OF OPERATING SAID APPARATUS
Title (en)
AN APPARATUS FOR ANALYZING THE CHARACTERISTICS OF A SEMICONDUCTOR WAFER AND METHOD OF OPERATING SAID APPARATUS
Title (de)
VORRICHTUNG ZUR ANALYSE DER EIGENSCHAFTEN EINES HALBLEITERWAFERS UND METHODE ZUR VERWENDUNG DER VORRICHTUNG
Title (fr)
DISPOSITIF PERMETTANT D'ANALYSER LES CARACTERISTIQUES D'UNE GALETTE DE SEMI-CONDUCTEUR ET METHODE D'UTILISATION DUDIT DISPOSITIF
Publication
Application
Priority
- US 9811562 W 19980605
- US 89069797 A 19970711
- US 1583998 A 19980129
Abstract (en)
[origin: WO9902970A1] An optical measurement system is disclosed for evaluating samples with multi-layer thin film stacks. The optical measurement system includes a reference ellipsometer and one or more non-contact optical measurement devices. The reference ellipsometer is used to calibrate the other optical measurement devices. Once calibration is completed, the system can be used to analyse multi-layer thin film stacks. In particular, the reference ellipsometer provides a measurement which can be used to determine the total optical thickness of the stack. Using that information coupled with the measurements made by the other optical measurement devices, more accurate information about individual layers can be obtained.
IPC 1-7
IPC 8 full level
G01B 11/06 (2006.01); G01N 21/21 (2006.01)
CPC (source: EP)
G01B 11/0641 (2013.01)
Citation (search report)
See references of WO 9902970A1
Designated contracting state (EPC)
DE ES FR GB IT NL SE
DOCDB simple family (publication)
WO 9902970 A1 19990121; EP 1012571 A1 20000628; JP 2003524748 A 20030819; JP 4231902 B2 20090304
DOCDB simple family (application)
US 9811562 W 19980605; EP 98926302 A 19980605; JP 2000502402 A 19980605