Global Patent Index - EP 1012971 A1

EP 1012971 A1 2000-06-28 - FORWARD BODY BIAS TRANSISTOR CIRCUITS

Title (en)

FORWARD BODY BIAS TRANSISTOR CIRCUITS

Title (de)

TRANSISTOR-SCHALTUNGEN MIT SUBSTRAT-VORWÄRTSVORSPANNUNG

Title (fr)

CIRCUITS DE TRANSISTOR A CORPS POLARISE EN SENS DIRECT

Publication

EP 1012971 A1 (EN)

Application

EP 98930284 A

Priority

  • US 9812523 W
  • US 88004797 A
  • US 7843298 A
  • US 7842498 A
  • US 7839598 A
  • US 7838898 A

Abstract (en)

[origin: WO9859419A1] Under one aspect of the invention, a semiconductor circuit (50) includes a first group of field effect (FET) transistors (60 and 62) of a first type (p-type) each having a body and a gate. The circuit includes a second group of field effect (FET) transistors (54 and 56) of a second type (n-type) each having a body and a gate. The circuit includes a first voltage source to selectively provide a forward bias to the bodies of the first group of FET transistors (60 and 62) during a first mode and to provide a non-forward bias to the bodies of the first group of FET transistors (60 and 62) during a second mode, and while in the first mode, the forward bias (68) is applied to the bodies of the first group of FET transistors (60 and 62) independent of voltages (A and B) applied to the gates of the first group of FET transistors (60 and 62). Under another aspect of the invention, a circuit (310) includes p-channel field effect transistors (pFET transistors) having n-type bodies electrically coupled to the ground voltage node to forward body bias the pFET transistors. A circuit includes N-channel field effect transistors (nFET transistors) having p-type bodies electrically coupled to the supply voltage node to forward body bias the nFET transistors.

IPC 1-7 (main, further and additional classification)

H03K 3/01

IPC 8 full level (invention and additional information)

H01L 27/092 (2006.01); H01L 29/10 (2006.01); H03K 19/0948 (2006.01)

CPC (invention and additional information)

H01L 27/0928 (2013.01); H01L 29/1087 (2013.01); H03K 19/0948 (2013.01); H03K 2217/0018 (2013.01)

Designated contracting state (EPC)

DE FR GB

EPO simple patent family

WO 9859419 A1 19981230; AU 7970898 A 19990104; CN 1196263 C 20050406; CN 1267406 A 20000920; EP 1012971 A1 20000628; EP 1012971 A4 20000920

INPADOC legal status


2004-04-21 [18R] REFUSED

- Effective date: 20031016

2002-03-27 [17Q] FIRST EXAMINATION REPORT

- Effective date: 20020206

2000-09-20 [A4] SUPPLEMENTARY SEARCH REPORT

- Effective date: 20000803

2000-09-20 [AK] DESIGNATED CONTRACTING STATES:

- Kind Code of Ref Document: A4

- Designated State(s): DE FR GB

2000-09-20 [RIC1] CLASSIFICATION (CORRECTION)

- Free text: 7H 03K 19/0948 A, 7H 01L 27/092 B, 7H 01L 29/10 B

2000-06-28 [17P] REQUEST FOR EXAMINATION FILED

- Effective date: 20000118

2000-06-28 [AK] DESIGNATED CONTRACTING STATES:

- Kind Code of Ref Document: A1

- Designated State(s): DE FR GB