EP 1016130 A1 20000705 - METAL AND METAL SILICIDE NITRIDIZATION IN A HIGH DENSITY, LOW PRESSURE PLASMA REACTOR
Title (en)
METAL AND METAL SILICIDE NITRIDIZATION IN A HIGH DENSITY, LOW PRESSURE PLASMA REACTOR
Title (de)
METALL UND METALLSILIZID-NITRIDIERUNG IN EINEM PLASMAAPPARAT MIT HOHER DICHTE UND NIEDRIGEM DRUCK
Title (fr)
NITRURATION DE METAL ET DE SILICIURE DE METAL DANS UN REACTEUR A PLASMA BASSE PRESSION, HAUTE DENSITE
Publication
Application
Priority
- US 9812934 W 19980622
- US 88171097 A 19970624
Abstract (en)
[origin: WO9859366A1] A nitridization process to form a barrier layer on a substrate is described. The nitridization process includes depositing a layer of metal or metal silicide on a surface of the substrate, placing the substrate into a high density, low pressure plasma reactor, introducing into the high density, low pressure plasma reactor a gas including nitrogen, and striking a plasma in the high density, low pressure plasma reactor under conditions that promote nitridization of at least a portion of the layer of metal or metal silicide to produce a composition of metal nitride or metal silicon nitride, respectively.
IPC 1-7
IPC 8 full level
C23C 16/56 (2006.01); H01L 21/28 (2006.01); H01L 21/768 (2006.01)
CPC (source: EP KR US)
H01L 21/285 (2013.01 - KR); H01L 21/76843 (2013.01 - EP US); H01L 21/76856 (2013.01 - EP US)
Citation (search report)
See references of WO 9859366A1
Designated contracting state (EPC)
AT DE FR IE IT NL
DOCDB simple family (publication)
WO 9859366 A1 19981230; EP 1016130 A1 20000705; JP 2002506568 A 20020226; KR 20010013723 A 20010226; TW 490509 B 20020611; US 2001002326 A1 20010531; US 6221792 B1 20010424
DOCDB simple family (application)
US 9812934 W 19980622; EP 98931457 A 19980622; JP 50493399 A 19980622; KR 19997011738 A 19991213; TW 87110020 A 19980622; US 76591801 A 20010118; US 88171097 A 19970624