EP 1018196 A1 20000712 - A SEMICONDUCTOR LASER DIODE BAR ASSEMBLY
Title (en)
A SEMICONDUCTOR LASER DIODE BAR ASSEMBLY
Title (de)
HALBLEITERLASERSTAB BAUGRUPPE
Title (fr)
ENSEMBLE BARREAU POUR DIODE LASER A SEMI-CONDUCTEUR
Publication
Application
Priority
- GB 9802782 W 19980914
- GB 9720376 A 19970926
Abstract (en)
[origin: GB2329758A] A semiconductor laser diode bar assembly comprises a plurality of sub-assemblies 1a,1 b each including a copper base plate 2a,2b in which is mounted a plurality of heat pipes 3, for distributing heat within the base plate from a region under a diode bar 4a,4b mounted to the base plate. The sub-assemblies 1a,1b are releasably mounted on a common heat sink 7 and may be electrically isolated from said heat sink by electrically insulating layer 11. Incorporation of the heat pipes into the base plate of each sub-assembly, which base plate forms an electrode for the diode bar, results in more efficient cooling of the diode bar 4. The other electrode of the diode bar may be provided by a conductive layer 6. The heart sink 7 may include a Peltier cooling device and a thermocouple.
IPC 1-7
IPC 8 full level
H01S 5/024 (2006.01); H01S 5/40 (2006.01); H01S 3/0941 (2006.01)
CPC (source: EP US)
H01S 5/4025 (2013.01 - EP US); H01S 3/0941 (2013.01 - EP); H01S 5/02345 (2021.01 - EP); H01S 5/02365 (2021.01 - EP); H01S 5/0237 (2021.01 - EP); H01S 5/02415 (2013.01 - EP); H01S 5/02469 (2013.01 - EP); H01S 5/4018 (2013.01 - EP)
Citation (search report)
See references of WO 9917411A1
Designated contracting state (EPC)
DE FI FR GB
DOCDB simple family (publication)
GB 2329758 A 19990331; GB 2329758 A8 19990629; GB 2329758 B 19990825; GB 9819708 D0 19981104; CA 2304859 A1 19990408; EP 1018196 A1 20000712; GB 9720376 D0 19971126; IL 135213 A0 20010520; JP 2001518722 A 20011016; WO 9917411 A1 19990408
DOCDB simple family (application)
GB 9819708 A 19980911; CA 2304859 A 19980914; EP 98942918 A 19980914; GB 9720376 A 19970926; GB 9802782 W 19980914; IL 13521398 A 19980914; JP 2000514365 A 19980914